Electrical characteristics, t – C&H Technology CM75TX-24S User Manual

Page 4

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CM75TX-24S
Six IGBTMOD™ NX-S Series Module
75 Amperes/1200 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com

3

06/11 Rev. 2

Electrical Characteristics,

T

j

= 25°C unless otherwise specified

Inverter Part IGBT/FWDi

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Collector-Emitter Cutoff Current

I

CES

V

CE

= V

CES

, V

GE

= 0V

1

mA

Gate-Emitter Leakage Current

I

GES

V

GE

= V

GES

, V

CE

= 0V

0.5

µA

Gate-Emitter Threshold Voltage

V

GE(th)

I

C

= 7.5mA, V

CE

= 10V

5.4

6

6.6

Volts

Collector-Emitter Saturation Voltage

V

CE(sat)

I

C

= 75A, V

GE

= 15V, T

j

= 25°C

*5

— 1.80 2.25 Volts

(Terminal) I

C

= 75A, V

GE

= 15V, T

j

= 125°C

*5

— 2.00 — Volts

I

C

= 75A, V

GE

= 15V, T

j

= 150°C

*5

— 2.05 — Volts

Collector-Emitter Saturation Voltage

V

CE(sat)

I

C

= 75A, V

GE

= 15V, T

j

= 25°C

*5

— 1.70 2.15 Volts

(Chip) I

C

= 75A, V

GE

= 15V, T

j

= 125°C

*5

— 1.90 — Volts

I

C

= 75A, V

GE

= 15V, T

j

= 150°C

*5

— 1.95 — Volts

Input Capacitance

C

ies

— — 7.5 nF

Output Capacitance

C

oes

V

CE

= 10V, V

GE

= 0V

1.5

nF

Reverse Transfer Capacitance

C

res

— — 0.13 nF

Gate Charge

Q

G

V

CC

= 600V, I

C

= 75A, V

GE

= 15V

175

nC

Turn-on Delay Time

t

d(on)

— — 300 ns

Rise Time

t

r

V

CC

= 600V, I

C

= 75A, V

GE

=

±15V,

200

ns

Turn-off Delay Time

t

d(off)

R

G

= 8.2Ω, Inductive Load

600

ns

Fall Time

t

f

— — 300 ns

Emitter-Collector Voltage

V

EC

*1

I

E

= 75A, V

GE

= 0V, T

j

= 25°C

*5

1.80

2.25

Volts

(Terminal) I

E

= 75A, V

GE

= 0V, T

j

= 125°C

*5

— 1.80 — Volts

I

E

= 75A, V

GE

= 0V, T

j

= 150°C

*5

— 1.80 — Volts

Emitter-Collector Voltage

V

EC

*1

I

E

= 75A, V

GE

= 0V, T

j

= 25°C

*5

1.70

2.15

Volts

(Chip) I

E

= 75A, V

GE

= 0V, T

j

= 125°C

*5

— 1.70 — Volts

I

E

= 75A, V

GE

= 0V, T

j

= 150°C

*5

— 1.70 — Volts

Reverse Recovery Time

t

rr

*1

V

CC

= 600V, I

E

= 75A, V

GE

=

±15V — — 300 ns

Reverse Recovery Charge

Q

rr

*1

R

G

= 8.2Ω, Inductive Load

4.0

µC

Internal Lead Resistance

R

CC' + EE'

Main Terminals-Chip,

2.4

mΩ

Per Switch,T

C

= 25°C

*2

Internal Gate Resistance

r

g

Per

Switch

— 0 — Ω

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling

diode (FWDi).

*2 Case temperature (T

C

) and heatsink temperature (T

s

) is measured on the surface

(mounting side) of the baseplate and the heatsink side just under the chips.

Refer to the figure to the right for chip location.

The heatsink thermal resistance should be measured just under the chips.

*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.

1

2

3 4 5

6

7 8

9 10 11 12 13 14 15 16 17 18 19 20 21 22

53

54
55

56
57
58
59

60
61

30
29

28
27
26
25

24
23

52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31

0

0

21.6

19.9

28.4

LABEL SIDE

Each mark points to the center position of each chip.

Tr*P / Tr*N: IGBT Di*P / Di*N: FWDi Th: NTC Thermistor

20.6

0

33.1

51

.6

64.1

82.6

96.1

30.0

24.1

104.5

Di

UP

Di

VP

Di

WP

Tr

UP

Tr

VP

Tr

WP

Di

UN

Di

VN

Di

WN

Tr

UN

Tr

VN

Tr

WN

Th

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