Electrical characteristics, t, Thermal resistance characteristics, Mechanical characteristics – C&H Technology CM75TX-24S User Manual

Page 5: Recommended operating conditons, t, 25°c

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CM75TX-24S
Six IGBTMOD™ NX-S Series Module
75 Amperes/1200 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com

4

06/11 Rev. 2

Electrical Characteristics,

T

j

= 25°C unless otherwise specified (continued)

NTC Thermistor Part

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Zero Power Resistance

R

25

T

C

= 25°C

*2

4.85 5.00 5.15 kΩ

Deviation of Resistance

∆R/R T

C

= 100°C, R

100

= 493Ω

-7.3

+7.8

%

B Constant

B

(25/50)

Approximate by Equation

*6

— 3375 — K

Power Dissipation

P

25

T

C

= 25°C

*2

— — 10 mW

Thermal Resistance Characteristics

Thermal Resistance, Junction to Case

*2

R

th(j-c)

Q

IGBT Part, Per 1/6 Module

0.25

K/W

Thermal Resistance, Junction to Case

*2

R

th(j-c)

D

FWDi Part, Per 1/6 Module

0.40

K/W

Contact Thermal Resistance,

R

th(c-f)

Thermal Grease Applied,

0.015

— K/W

Case to Heatsink

*2

Per 1 Module

*7

Mechanical Characteristics

Mounting Torque M

s

Mounting to Heatsink, M5 Screw

22 27 31 in-lb

Weight

m

— 300 — Grams

Creepage Distance

d

s

Terminal to Terminal

10.28

mm

Terminal to Baseplate

14.27

— — mm

Clearance

d

a

Terminal to Terminal

10.28

mm

Terminal to Baseplate

12.33

— — mm

Flatness of Baseplate

e

c

On Centerline X, Y

*8

±0 — ±100 µm

Recommended Operating Conditons,

T

a

= 25°C

DC Supply Voltage

V

CC

Applied Across P-N/P1-N1 Terminals

600

850

Volts

Gate-Emitter Drive Voltage

V

GE(on)

Applied

Across

13.5 15.0 16.5 Volts

G*P-Es*P/G*N-Es*N Terminals

External Gate Resistance

R

G

Per Switch

8.2

82

*2 Case temperature (T

C

) and heatsink temperature (T

s

) is measured on the surface

(mounting side) of the baseplate and the heatsink side just under the chips.

Refer to the figure to the right for chip location.

The heatsink thermal resistance should be measured just under the chips.

*6 B

(25/50)

= In(

R

25

)/(

1

1

)

R

50

T

25

T

50

R

25

; Resistance at Absolute Temperature T

25

[K]; T

25

= 25 [°C] + 273.15 = 298.15 [K]

R

50

; Resistance at Absolute Temperature T

50

[K]; T

50

= 50 [°C] + 273.15 = 323.15 [K]

*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.

– :

CONC

A

VE

+ :

CONVEX

– : CONCAVE

X

Y

+ : CONVEX

MOUNTING

SIDE

MOUNTING SIDE

MOUNTING SIDE

1

2

3 4 5

6

7 8

9 10 11 12 13 14 15 16 17 18 19 20 21 22

53

54
55

56
57
58
59

60
61

30
29

28
27
26
25

24
23

52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31

0

0

21.6

19.9

28.4

LABEL SIDE

Each mark points to the center position of each chip.

Tr*P / Tr*N: IGBT Di*P / Di*N: FWDi Th: NTC Thermistor

20.6

0

33.1

51

.6

64.1

82.6

96.1

30.0

24.1

104.5

Di

UP

Di

VP

Di

WP

Tr

UP

Tr

VP

Tr

WP

Di

UN

Di

VN

Di

WN

Tr

UN

Tr

VN

Tr

WN

Th

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