Phase control scr, Thermal characteristics, Electrical characteristics, t – C&H Technology TAK7--12 User Manual

Page 4: 25°c unless otherwise specified

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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272

Phase Control SCR

www.pwrx.com

1200 Amperes Average

4400 Volts

Revision Date: 03/26/2010

TAK7

1200A

®











Thermal Characteristics

Maximum Thermal Resistance, Double Sided Cooling

Max.

Units

Junction-to-Case
Case-to-Sink

R

Θ(J-C)

R

Θ(C-S)


0.015
0.007

°C/W
°C/W


















Electrical Characteristics, T

J

=25°C unless otherwise specified

Characteristics Symbol

Test

Conditions

Min.

Typ. Max.

Units

Repetitive Peak Reverse Leakage Current

I

RRM

T

J

=125°C, V

R

= V

RRM

250

mA

Repetitive Peak Forward Leakage Current

I

DRM

T

J

=125°C, V

D

= V

DRM

250

mA

Peak On-State Voltage

V

TM

T

J

=25°C, I

TM

=1500A peak,

Duty Cycle < 0.1 %

1.90 V

Threshold Voltage, Low-level
Slope Resistance, Low-level

V

(TO)1

r

T1

T

J

= 125°C, ITM = 250A to 4000A

1.262

0.397

V

mΩ

Threshold Voltage, High-level
Slope Resistance, High-level

V

(TO)2

r

T2

T

J

= 125°C, I

TM

≥ 4000A

1.412

0.368

V

mΩ

V

TM

Coefficients



T

J

= 125°C

V

TM

= A+ B Ln(I) +C(I) + D Sqrt(I)

A =
B =
C =
D =

2.53

-0.294

2.47 E-04

0.0284

Typical Delay Time

t

d

I

TM

= 1000A, V

D

= 1500 V

4 µ

s

Typical Turn-Off Time

t

q

T

j

= 125°C, I

T

= 250A,

di

R

/dt = 50A/µs Reapplied

dv/dt = 20 V/µs Linear to 80% V

DRM

500

µ

s

Minimum Critical dv/dt – Exponential to V

DRM

dv/dt

T

J

= 125°C

1000

V/µ

s

Gate Trigger Current

I

GT

T

J

= 25°C, V

D

= 12 V

300 mA

Gate Trigger Voltage

V

GT

T

J

= 25°C, V

D

= 12 V

5.0 V

Non-Triggering Gate Voltage

V

GDM

T

J

= 125°C, V

D

= V

DRM

0.45 V

Peak Forward Gate Current

I

GTM

4 A

Peak Reverse Gate Voltage

V

GRM

5 V

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