Datasheet, Vishay high power products, Rohs – C&H Technology GB200TS60NPbF User Manual
Page 2
Document Number: 94503
For technical questions, contact: [email protected]
www.vishay.com
Revision: 07-May-08
1
INT-A-PAK "Half-Bridge"
(Ultrafast Speed IGBT), 209 A
GB200TS60NPbF
Vishay High Power Products
FEATURES
• Generation 5 Non Punch Through (NPT)
technology
• Ultrafast: Optimized for hard switching operating
frequencies 8 to 60 kHz
• Low V
CE(on)
• 10 µs short circuit capability
• Square RBSOA
• Positive V
CE(on)
temperature coefficient
• HEXFRED
®
antiparallel diode with ultrasoft reverse
recovery characteristics
• Industry standard package
• Al
2
O
3
DBC
• UL pending
• Designed for industrial level and lead (Pb)-free
BENEFITS
• Benchmark efficiency for UPS and welding application
• Rugged transient performance
• Direct mounting on heatsink
• Very low junction to case thermal resistance
PRODUCT SUMMARY
V
CES
600 V
I
C
DC
209 A
V
CE(on)
at 100 A, 25 °C
2.6 V
INT-A-PAK
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL
TEST
CONDITIONS
MAX.
UNITS
Collector to emitter voltage
V
CES
600
V
Continuous collector current
I
C
T
C
= 25 °C
209
A
T
C
= 80 °C
142
Pulsed collector current
I
CM
400
Clamped inductive load current
I
LM
400
Diode continuous forward current
I
F
T
C
= 25 °C
178
T
C
= 80 °C
121
Gate to emitter voltage
V
GE
± 20
V
Maximum power dissipation
P
D
T
C
= 25 °C
781
W
T
C
= 80 °C
438
Isolation voltage
V
ISOL
Any terminal to case, t = 1 min
2500
V