Datasheet, Vishay high power products, Rohs – C&H Technology GB50YF120N User Manual

Page 2

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Document Number: 93653

For technical questions, contact: [email protected]

www.vishay.com

Revision: 29-May-08

1

IGBT Fourpack Module, 50 A

GB50YF120N

Vishay High Power Products

FEATURES

• Square RBSOA

• HEXFRED

®

low Q

rr

, low switching energy

• Positive V

CE(on)

temperature coefficient

• Copper baseplate

• Low stray inductance design

• Operating frequencies 8 to 60 kHz

• Designed and qualified for industrial market

BENEFITS

• Benchmark efficiency for SMPS appreciation in particular

HF welding

• Rugged transient performance

• Low EMI, requires less snubbing

• Direct mounting to heatsink space saving

• PCB solderable terminals

• Low junction to case thermal resistance

PRODUCT SUMMARY

V

CES

1200 V

I

C

at T

C

= 66 °C

50 A

V

CE(on)

(typical)

3.49 V

ECONO2 4PACK

RoHS

COMPLIANT

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL

TEST

CONDITIONS

MAX.

UNITS

Collector to emitter voltage

V

CES

1200

V

Continuous collector current

I

C

T

C

= 25 °C

66

A

T

C

= 80 °C

44

Pulsed collector current

I

CM

See fig. C.T.5

150

Clamped inductive load current

I

LM

150

Diode continuous forward current

I

F

T

C

= 25 °C

40

T

C

= 80 °C

25

Diode maximum forward current

I

FM

150

Gate to emitter voltage

V

GE

± 20

V

Maximum power dissipation (IGBT)

P

D

T

C

= 25 °C

330

W

T

C

= 80 °C

180

Maximum operating junction temperature

T

J

150

°C

Storage temperature range

T

Stg

- 40 to + 125

Isolation voltage

V

ISOL

AC 2500 (MIN)

V

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