Vishay high power products, Igbt fourpack module, 50 a, Thermal - mechanical specifications – C&H Technology GB50YF120N User Manual
Page 4
Document Number: 93653
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www.vishay.com
Revision: 29-May-08
3
GB50YF120N
IGBT Fourpack Module, 50 A
Vishay High Power Products
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case Temperature
Fig. 3 - Forward SOA
T
C
= 25 °C; T
J
≤ 150 °C
Fig. 4 - Reverse Bias SOA
T
J
= 150 °C; V
GE
= 15 V
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL
MIN.
TYP.
MAX.
UNITS
Junction to case IGBT
R
thJC
(IGBT)
-
-
0.38
°C/W
Junction to case DIODE
R
thJC
(DIODE)
-
-
1.00
Case to sink, flat, greased surface
R
thCS
(MODULE)
-
0.05
-
Mounting torque (M5)
2.7
-
3.3
Nm
Weight
-
170
-
g
0
10
20
30
40
50
60
70
0
20
40
60
80
100
120
140
160
T
C
(°C)
I
C
(A)
0
20
40
60
80
100 120 140 160
0
50
100
150
200
250
300
350
T
C
(°C)
P
D
(W)
1
10
100
1000
10000
0.01
0.1
1
10
100
1000
V
CE
(V)
IC (A)
10
100
1000
10000
1
10
100
1000
T
C
(°C)
P
D
(W)