C&H Technology GA100NA60UP - Manual (Page 2)

Document Number: 94543 For technical questions, contact: [email protected] www.vishay.com
Revision: 13-May-08 1
Insulated Gate Bipolar Transistor
(Ultrafast Speed IGBT), 50 A
GA100NA60UP
Vishay High Power Products
FEATURES
• Ultrafast: Optimized for minimum saturation
voltage and operating frequencies 0 to 40 kHz in
hard switching, > 200 kHz in resonant mode
• Very low conduction and switching losses
• Fully isolated package (2500 V AC/RMS)
• Very low internal inductance (
≤ 5 nH typical)
• Industry standard outline
• UL pending
• Totally lead (Pb)-free
• Designed and qualified for industrial market
BENEFITS
• Designed for increased operating efficiency in power
conversion: PFC, UPS, SMPS, welding, induction heating
• Lower overall losses available at frequencies
≥ 20 kHz
• Easy to assemble and parallel
• Direct mounting to heatsink
• Lower EMI, requires less snubbing
• Plug in compatible with other SOT-227 packages
PRODUCT SUMMARY
V
CES
600 V
I
C
DC 100 A
V
CE(on)
at 50 A, 25 °C 1.49 V
SOT-227
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter breakdown voltage V
CES
600 V
Continuous collector current I
C
T
C
= 25 °C 100
A
T
C
= 100 °C 50
Pulsed collector current I
CM
200
Clamped inductive load current I
LM
Repetitive rating: V
GE
= 20 V; pulse width limited
by maximum junction temperature (fig. 20)
200
Gate to emitter voltage V
GE
± 20
V
RMS isolation voltage V
ISOL
Any terminal to case, t = 1 min 2500
Maximum power dissipation P
D
T
C
= 25 °C 250
W
T
C
= 100 °C 100
Operating junction and storage
temperature range
T
J
, T
Stg
- 55 to + 150 °C
Mounting torque 6 to 32 or M3 screw
12
(1.3)
Ibf · in
(N · m)
THERMAL RESISTANCE
PARAMETER SYMBOL TYP. MAX. UNITS
Junction to case, IGBT R θJC - 0.50
°C/W
Thermal resistance, junction to case, diode R θJC - 1.0
Case to sink, flat, greased surface R θCS 0.05 -
Weight of module 30 - g