C&H Technology GA100NA60UP - Manual (Page 6)

Document Number: 94543 For technical questions, contact: [email protected] www.vishay.com
Revision: 13-May-08 5
GA100NA60UP
Insulated Gate Bipolar Transistor
(Ultrafast Speed IGBT), 50 A
Vishay High Power Products
Fig. 12 - Typical Forward Voltage Drop vs.
Instantaneous Forward Current
Fig. 13 - Typical Reverse Recovery vs. dI
F
/dt
Fig. 14 - Typical Recovery Current vs. dI
F
/dt
Fig. 15 - Typical Stored Charge vs. dI
F
/dt
1
10
100
1000
0.0 0.4 0.8 1.2 1.6 2.0
F M
T = 1 5 0 °C
T = 1 2 5 °C
T = 25 °C
J
J
J
F orwa rd V oltag e D ro p - V (V )
Instantaneous forward current - I
F
(A)
trr-
(nC)
0
3 0
6 0
9 0
1 2 0
1 5 0
0 0 0 1 0 0 1
f di /d t - (A /μ s)
I = 100A
I = 50A
I = 25A
F
F
F
V = 2 0 0 V
T = 1 2 5 °C
T = 2 5 °C
R
J
J
Irr-
(
A)
1
1 0
1 0 0
0 0 0 1 0 0 1
f di /dt - (A/μ s)
I = 100A
I = 50A
I = 25A F
F
F
V = 2 0 0 V
T = 1 2 5 ° C
T = 2 5 °C
R
J
J
Qrr-
(nC)
0
1 0 0 0
2 0 0 0
3 0 0 0
4 0 0 0
0 0 0 1 0 0 1
f di /dt - (A /µ s)
I = 100A
I = 50A
I = 25A
F
F
F
V = 2 0 0 V
T = 1 2 5 °C
T = 2 5 °C
R
J
J