Vishay semiconductors – C&H Technology VS-GB150TH120N User Manual
Page 5
VS-GB150TH120N
www.vishay.com
Vishay Semiconductors
Revision: 26-Mar-13
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Document Number: 94760
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Fig. 5 - RBSOA
Fig. 6 - IGBT Transient Thermal Impedance
Fig. 7 - Diode Typical Forward Characteristics
Fig. 8 - Diode Switching Loss vs. I
F
0
50
100
150
200
250
300
350
0
300
900
600
1200
1500
V
CE
(V)
I
C
(A)
V
GE
= ± 15 V
T
J
=
125 °C
R
g
= 4.7
Ω
I
C
, Module
t (s)
Z
thJC
(K/W)
10
0
10
-1
10
-2
10
-3
10
0
10
1
10
-1
10
-2
10
-3
IGBT
0
100
150
50
200
250
300
0
1
0.5
2
1.5
2.5
3.5
3
I
F
(A)
V
F
(V)
T
J
= 25 °C
T
J
=125 °C
0
5
10
15
20
25
30
0
50
100
150
200
250
300
I
F
(A)
E
(mJ)
V
GE
= - 15 V
T
J
=
125 °C
R
g
= 4.7
Ω
V
CC
= 600 V