Vishay semiconductors, Circuit configuration – C&H Technology VS-GB150TH120N User Manual
Page 6
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VS-GB150TH120N
www.vishay.com
Vishay Semiconductors
Revision: 26-Mar-13
5
Document Number: 94760
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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www.vishay.com/doc?91000
Fig. 9 - Diode Switching Loss vs.R
g
Fig. 10 - Diode Transient Thermal Impedance
CIRCUIT CONFIGURATION
0
5
10
15
20
25
40
45
35
30
0
2.5
5
7.5
10
12.5
15
R
g
(Ω)
E
(mJ)
V
GE
= - 15 V
T
J
=
125 °C
I
C
= 150 A
V
CC
= 600 V
E
REC
t (s)
Z
thJC
(K/W)
Diode
10
0
10
1
10
-1
10
-2
10
-3
10
0
10
-1
10
-2
1
6
7
3
2
5
4
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95525
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