C&H Technology GB75YF120N - Manual (Page 2)

Document Number: 93654 For technical questions, contact: [email protected] www.vishay.com
Revision: 29-May-08 1
IGBT Fourpack Module, 75 A
GB75YF120N
Vishay High Power Products
FEATURES
• Square RBSOA
• HEXFRED ® low Q
rr
, low switching energy
• Positive V
CE(on)
temperature coefficient
• Copper baseplate
• Low stray inductance design
• Operating frequencies 8 to 60 kHz
• Designed and qualified for industrial market
BENEFITS
• Benchmark efficiency for SMPS appreciation in particular
HF welding
• Rugged transient performance
• Low EMI, requires less snubbing
• Direct mounting to heatsink space saving
• PCB solderable terminals
• Low junction to case thermal resistance
PRODUCT SUMMARY
V
CES
1200 V
I
C
at T
C
= 67 °C 75 A
V
CE(on)
(typical) 3.4 V
ECONO2 4PACK
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
CES
1200 V
Continuous collector current I
C
T
C
= 25 °C 100
A
T
C
= 80 °C 67
Pulsed collector current I
CM
See fig. C.T.5 200
Clamped inductive load current I
LM
200
Diode continuous forward current I
F
T
C
= 25 °C 40
T
C
= 80 °C 25
Diode maximum forward current I
FM
150
Gate to emitter voltage V
GE
± 20 V
Maximum power dissipation (IGBT) P
D
T
C
= 25 °C 480
W
T
C
= 80 °C 270
Maximum operating junction temperature T
J
150
°C
Storage temperature range T
Stg
- 40 to + 125
Isolation voltage V
ISOL
AC 2500 (MIN) V