Vishay high power products, Igbt fourpack module, 75 a – C&H Technology GB75YF120N User Manual
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Document Number: 93654
6
Revision: 29-May-08
GB75YF120N
Vishay High Power Products
IGBT Fourpack Module, 75 A
Fig. 17 - Typical Diode Q
rr
vs. dI
F
/dt
V
CC
= 600 V; I
F
= 50 A
Fig. 18 - Typical Gate Charge vs. V
GE
I
CE
= 5.0 A; L = 600 µH
Fig. 19 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)
Fig. 20 - Maximum Transient Thermal Impedance, Junction to Case (DIODE)
0
20
40
60
80
100
0
200
400
600
800
1000
1200
1400
1600
125°C
25°C
dI
F/
dt (A/µs)
Q
RR
(nC)
Q
G
, Total Gate Charge (nC)
V
GE
(V)
0
100
200
300
400
500
600
700
0
2
4
6
8
10
12
14
16
typical value
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
1E-005
0.0001
0.001
0.01
0.1
1
0.20
0.10
D = 0.50
0.01
0.02
0.05
SINGLE PULSE
( THERMAL RESPONSE )
t
1
, Rectangular Pulse Duration (sec)
Thermal Response (Z
thJC
)
1E-006
1E-005
0.0001
0.001
0.001
0.01
0.1
1
10
0.20
0.10
D = 0.50
0.01
0.02
0.05
SINGLE PULSE
( THERMAL RESPONSE )
t
1
, Rectangular Pulse Duration (sec)
Thermal Response (Z
thJC
)