C&H Technology VS-GT100TP120N - Manual (Page 3)

VS-GT100TP120N
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Vishay Semiconductors
Revision: 06-Aug-12 2 Document Number: 93800
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IGBT ELECTRICAL SPECIFICATIONS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
(BR)CES
T
J
= 25 °C 1200 - -
V Collector to emitter saturation voltage V
CE(sat)
V
GE
= 15 V, I
C
= 100 A, T
J
= 25 °C - 1.90 2.35
V
GE
= 15 V, I
C
= 100 A, T
J
= 175 °C - 2.50 -
Gate to emitter threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 5.0 mA, T
J
= 25 °C 5.0 5.9 7.5
Collector cut-off current I
CES
V
CE
= V
CES
, V
GE
= 0 V, T
J
= 25 °C - - 5.0 mA
Gate to emitter leakage current I
GES
V
GE
= V
GES
, V
CE
= 0 V, T
J
= 25 °C - - 400 nA
SWITCHING CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Turn-on delay time t
d(on)
V
CC
= 600 V, I
C
= 100 A, R
g
= 5.6
,
V
GE
= ± 15 V, T
J
= 25 °C
- 187 -
ns
Rise time t
r
- 57 -
Turn-off delay time t
d(off)
- 180 -
Fall time t
f
- 149 -
Turn-on switching loss E
on
- 4.97 -
mJ
Turn-off switching loss E
off
- 4.69 -
Turn-on delay time t
d(on)
V
CC
= 600 V, I
C
= 100 A, R
g
= 5.6 ,
V
GE
= ± 15 V, T
J
= 125 °C
- 189 -
ns
Rise time t
r
- 58 -
Turn-off delay time t
d(off)
- 187 -
Fall time t
f
- 220 -
Turn-on switching loss E
on
- 7.80 -
mJ
Turn-off switching loss E
off
- 5.85 -
Input capacitance C
ies
V
GE
= 0 V, V
CE
= 30 V, f = 1.0 MHz
- 12.8 -
nF Output capacitance C
oes
- 0.46 -
Reverse transfer capacitance C
res
- 0.32 -
SC data I
SC
t
p
 10 μs, V
GE
= 15 V, T
J
= 125 °C,
V
CC
= 900 V, V
CEM
 1200 V - 890 - A
Stray inductance L
CE
- - 30 nH
Module lead resistance, terminal to chip R
CC’+EE’
- 0.75 - m

DIODE ELECTRICAL SPECIFICATIONS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Forward voltage V
F
I
F
= 100 A
T
J
= 25 °C - 1.82 2.20
V
T
J
= 125 °C - 1.95 -
Reverse recovery charge Q
rr
I
F
= 100 A, V
R
= 600 V,
R
G
= 5.6

V
GE
= - 15 V
T
J
= 25 °C - 8.1 -
μC
T
J
= 125 °C - 14.0 -
Peak reverse recovery current I
rr
T
J
= 25 °C - 81 -
A
T
J
= 125 °C - 98 -
Reverse recovery energy E
rec
T
J
= 25 °C - 2.99 -
mJ
T
J
= 125 °C - 4.85 -