C&H Technology VS-GT100TP120N - Manual (Page 5)

VS-GT100TP120N
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Vishay Semiconductors
Revision: 06-Aug-12 4 Document Number: 93800
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Fig. 5 - RBSOA
Fig. 6 - IGBT Transient Thermal Impedance
Fig. 7 - Diode Forward Characteristics Fig. 8 - Diode Switching Loss vs. I
F
I C
(A)
V
CE
(V)
0
50
100
150
200
250
0 350 700 1050 1400
Module
R
G
= 5.6 Ω
V
GE
= ± 15 V
T
J
= 125 °C
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10
IGBT
t (s)
Z
thJC
(K/W)
0
25
50
75
100
125
150
175
200
0 0.5 1 1.5 2 2.5 3
25 °C
125 °C
V
F
(V)
I F
(A)
I
F
(V)
E (mJ)
0
1
2
3
4
5
6
7
8
0 50 100 150 200
E
REC
V
CC = 600 V
R
G
= 5.6 Ω
V
GE
= - 15 V
T
J
= 125 °C