Vishay semiconductors, Thermal and mechanical specifications – C&H Technology VS-GB400TH120N User Manual

Page 4

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VS-GB400TH120N

www.vishay.com

Vishay Semiconductors

Revision: 06-Mar-13

3

Document Number: 94788

For technical questions within your region:

[email protected]

,

[email protected]

,

[email protected]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Transfer Characteristics

Fig. 3 - Switching Loss vs. I

C

Fig. 4 - Switching Loss vs. R

g

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Operating junction temperature range

T

J

- 40

-

150

°C

Storage temperature range

T

STG

- 40

-

125

Junction to case,
per 1/2 module

IGBT

R

thJC

-

-

0.048

K/W

Diode

-

-

0.085

Case to sink

R

thCS

Conductive grease applied

-

0.032

-

Mounting torque

Power terminal screw: M6

2.5 to 5.0

Nm

Mounting screw: M6

3.0 to 6.0

Weight

340

g

I

C

(A)

V

CE

(V)

0

100

200

300

400

500

600

700

800

0

1

3

4

2

V

GE

= 15 V

25 °C

125 °C

0

100

200

300

400

500

600

700

800

6

7

9

10

11

8

I

C

(A)

V

GE

(V)

V

CE

= 20 V

125 °C

25 °C

0

20

40

60

80

100

120

140

160

180

0

200

600

800

1000

400

V

GE

= ± 15 V

T

J

=

125 °C

R

g

= 2.5

Ω

V

CC

= 600 V

I

C

(A)

E

on

, E

of

f

(mJ)

E

on

E

off

0

20

40

60

80

100

120

140

160

180

E

on

, E

of

f

(mJ)

E

on

E

off

0

5

10

15

20

V

GE

= ± 15 V

T

J

=

125 °C

I

C

= 400 A

V

CC

= 600 V

R

g

(

Ω)

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