Vishay semiconductors – C&H Technology VS-GB400TH120N User Manual
Page 5
VS-GB400TH120N
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Vishay Semiconductors
Revision: 06-Mar-13
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Document Number: 94788
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Fig. 5 - Gate Charge Characteristics
Fig. 6 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 7 - Typical Switching Time vs.I
C
Fig. 8 - Typical Switching Time vs. Gate Resistance R
g
Fig. 9 - Typical Forward Characteristics Diode
- 8
- 4
0
4
8
12
16
20
0
1
3
4
5
2
V
CC
= 600 V
V
G
E
(V)
Q
g
-
(μC)
T
J
=
25 °C
I
C
= 150 A
V
CE
(V)
C (nF)
10
1
10
2
10
0
10
-1
C
ies
C
oes
0
1
3
4
2
C
res
0
200
600
800
1000
400
t (ns)
10
2
10
3
10
1
V
GE
= ± 15 V
T
J
=
125 °C
R
g
= 2.5
Ω
V
CC
= 600 V
t
d(off)
t
d(on)
t
f
t
r
I
C
(A)
t (ns)
R
g
(
Ω)
10
3
10
4
10
2
10
1
0
5
10
15
20
V
GE
= ± 15 V
T
J
=
125 °C
I
C
= 400 A
V
CC
= 600 V
t
d(off)
t
d(on)
t
f
t
r
I
F
(A)
V
F
(V)
0
1
2
3
800
600
400
200
0
25 °C
125 °C