Vishay semiconductors, Thermal and mechanical specifications – C&H Technology VS-GB200TH120U User Manual
Page 4
VS-GB200TH120U
www.vishay.com
Vishay Semiconductors
Revision: 17-Sep-12
3
Document Number: 94754
For technical questions within your region:
,
,
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Fig. 1 - IGBT Typical Output Characteristics
Fig. 2 - IGBT Typical Transfer Characteristics
Fig. 3 - IGBT Switching Loss vs. I
C
Fig. 4 - IGBT Switching Loss vs. R
g
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Operating junction temperature range
T
J
-
-
150
°C
Storage temperature range
T
STG
- 40
-
125
Junction to case
IGBT
R
thJC
-
-
0.095
K/W
Diode
-
-
0.140
Case to sink
R
thCS
Conductive grease applied
-
0.035
-
Mounting torque
Power terminal screw: M5
2.5 to 5.0
Nm
Mounting screw: M6
3.0 to 6.0
Weight
300
g
0
50
100
150
200
250
300
400
350
0
1
2
3
4
5
V
CE
(V)
I
C
(A)
V
GE
= 15 V
25 °C
125 °C
0
50
100
150
200
250
300
400
350
4
5
6
7
8
9
10
11
12
V
GE
(V)
I
C
(A)
V
CE
= 20 V
125 °C
25 °C
0
10
20
30
40
50
60
70
80
0
100
200
300
400
I
C
(A)
E
on
, E
of
f
(mJ)
V
GE
= ± 15 V
T
J
=
125 °C
R
g
= 4.7
Ω
V
CC
= 600 V
E
off
E
on
0
30
60
90
120
150
0
10
20
30
40
50
R
g
(
Ω)
V
GE
= ± 15 V
T
J
=
125 °C
I
C
= 200 A
V
CC
= 600 V
E
ON
, E
OFF
(mJ)
E
off
E
on