Vishay semiconductors – C&H Technology VS-GB200TH120U User Manual
Page 5
VS-GB200TH120U
www.vishay.com
Vishay Semiconductors
Revision: 17-Sep-12
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Document Number: 94754
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Fig. 5 - RBSOA
Fig. 6 - IGBT Transient Thermal Impedance
Fig. 7 - Diode Typical Forward Characteristics
Fig. 8 - Diode Switching Loss vs. I
F
0
50
100
150
200
250
300
350
400
450
500
0
300
600
900
1200
1500
V
CE
(V)
I
C
(A)
R
g
= 4.7
Ω
V
GE
= 15 V
T
J
= 125 °C
I
C
, Module
IGBT
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
t
(s)
Z
thJC
- Thermal Impedance (K/W)
0
50
100
150
200
250
300
400
350
0
0.5
1
1.5
2
2.5
3
V
F
(V)
I
F
(A)
25 °C
125 °C
I
C
(A)
E (mJ)
0
4
8
12
16
20
24
0
80
160
240
320
400
E
rec
V
CC
= 600 V
R
g
= 4.7
Ω
V
GE
= - 15 V
T
J
= 125 °C