C&H Technology 20MT060KF User Manual
Vishay high power products
Document Number: 93223
For technical questions, contact:
www.vishay.com
Revision: 29-Apr-10
1
"Full Bridge" IGBT MTP (Ultrafast NPT IGBT), 20 A
20MT060KF
Vishay High Power Products
FEATURES
• Generation 5 Non Punch Through (NPT)
technology
• Positive V
CE(on)
temperature coefficient
• 10 μs short circuit capability
• FRED Pt
®
hyperfast rectifier
• Low V
CE(on)
• Square RBSOA
• Very low conduction and switching losses
• Very low stray inductance design for high speed operation
• UL approved file E78996
• Speed 8 kHz to 60 kHz
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Optimized for welding, UPS and SMPS applications
• Low EMI, requires less snubbing
• Excellent current sharing in parallel operation
• Direct mounting to heatsink
• PCB solderable terminals
• Very low junction to case thermal resistance
PRODUCT SUMMARY
V
CES
600 V
I
C(DC)
20 A at T
C
= 97 °C
V
CE(on)
(typical)
at I
C
= 20 A, 25 °C
1.9 V
MTP
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX. UNITS
Collector to emitter voltage
V
CES
600
V
Continuous collector current
I
C
T
C
= 25 °C
35
A
T
C
= 80 °C
24
Pulsed collector current
I
CM
70
Clamped inductive load current
I
LM
70
Diode continuous forward current
I
F
T
C
= 95 °C
20
Peak diode forward current
I
FSM
70
Gate to emitter voltage
V
GE
± 20
V
RMS isolation voltage
V
ISOL
Any terminal to case, t = 1 minute
2500
Maximum power dissipation
per single IGBT
P
D
T
C
= 25 °C
114
W
T
C
= 80 °C
64