Vishay high power products, Full bridge" igbt mtp (ultrafast npt igbt), 20 a – C&H Technology 20MT060KF User Manual
Page 5
Document Number: 93223
For technical questions, contact:
www.vishay.com
Revision: 29-Apr-10
5
20MT060KF
"Full Bridge" IGBT MTP
(Ultrafast NPT IGBT), 20 A
Vishay High Power Products
Fig. 9 - Typical IGBT Energy Loss vs. I
C
, T
J
= 125 °C
V
CC
= 360 V, V
GE
= 15 V, L = 500 μH, R
g
= 5
Ω
Fig. 10 - Typical IGBT Switching Time vs. I
C
, T
J
= 125 °C
V
CC
= 360 V, V
GE
= 15 V, L = 500 μH, R
g
= 5
Ω
Fig. 11 - Typical IGBT Energy Loss vs. R
g
, T
J
= 125 °C
I
C
= 20 A, V
CC
= 360 V, V
GE
= 15 V, L = 500 μH
Fig. 12 - Typical IGBT Switching Time vs. R
g
, T
J
= 125 °C
I
C
= 20 A, V
CC
= 360 V, V
GE
= 15 V, L = 500 μH
Fig. 13 - Typical t
rr
Diode vs. dI
F
/dt
V
R
= 400 V; I
F
= 20 A
Fig. 14 - Typical I
rr
Diode vs. dI
F
/dt
V
R
= 400 V; I
F
= 20 A
Ener
g
y (mJ)
I
C
(A)
0
10
20
40
50
30
60
0
93223_09
0.8
0.3
0.6
0.5
0.4
0.7
0.2
0.1
E
on
E
off
S
witchin
g
Time (ns)
I
C
(A)
0
20
50
40
10
30
60
10
93223_10
1000
100
t
d(off)
t
d(on)
t
f
t
r
Ener
g
y (mJ)
R
g
(
Ω)
0
10
20
40
30
50
0
93223_11
0.8
0.3
0.6
0.4
0.7
0.5
0.2
0.1
E
on
E
off
S
witchin
g
Time (ns)
R
g
(
Ω)
0
10
30
40
20
50
10
93223_12
1000
100
t
d(off)
t
d(on)
t
f
t
r
t
rr
(ns)
dI
F
/dt (A/μs)
100
93223_13
1000
30
190
90
130
170
70
50
110
150
T
J
= 125 °C
T
J
= 25 °C
I
rr
(A)
dI
F
/dt (A/μs)
100
93223_14
1000
0
30
10
20
15
25
5
T
J
= 125 °C
T
J
= 25 °C