C&H Technology CM1200E4C-34N User Manual
Page 4
CM1200E4C-34N
Chopper IGBTMOD™ HVIGBT Module
1200 Amperes/1700 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
3
8/05
Static Electrical Characteristics, T
j
= 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
I
CES
V
CE
= V
CES
, V
GE
= 0V, T
j
= 25°C
–
–
4.0
mA
V
CE
= V
CES
, V
GE
= 0V, T
j
= 125°C
–
3.0
8.0
mA
Gate-Emitter Threshold Voltage
V
GE(th)
I
C
= 120mA, V
CE
= 10V
6.0
7.0
8.0
Volts
Gate Leakage Current
I
GES
V
GE
= V
GES
, V
CE
= 0V
–
–
0.5
µA
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
= 1200A, V
GE
= 15V, T
j
= 25°C
–
2.15 2.80 Volts
I
C
= 1200A, V
GE
= 15V, T
j
= 125°C
–
2.4
–
Volts
Input Capacitance
C
ies
V
CE
= 10V, V
GE
= 0V,
–
176
–
nF
Output Capacitance
C
oes
f = 100kHz,
–
9.6
–
nF
Reverse Transfer Capacitance
C
res
T
j
= 25°C
–
2.8
–
nF
Total Gate Charge
Q
G
V
CC
= 850V, I
C
= 1200A, V
GE
= 15V
–
6.8
–
µC
Emitter-Collector Voltage**
V
EC
I
E
= 1200A, V
GE
= 0V, T
j
= 25°C
–
2.6
3.3 V
olts
I
E
= 1200A, V
GE
= 0V, T
j
= 125°C
–
2.3
–
Volts
Forward Voltage***
V
F
I
F
= 1200A, V
GE
= 0V, T
j
= 25°C
–
2.6
–
Volts
I
F
= 1200A, V
GE
= 0V, T
j
= 125°C
–
2.3
–
Volts
Turn-On Delay Time
t
d(on)
V
CC
= 850V, I
C
= 1200A,
–
0.8
–
µs
Turn-On Rise Time
t
r
V
GE1
= -V
GE2
= 15V, R
G(on)
= 0.6Ω,
–
0.4
–
µs
Turn-On Switching Energy
E
on
Inductive Load
–
380
–
mJ/P
Turn-Off Delay Time
t
d(off)
V
CC
= 850V, I
C
= 1200A,
–
1.2
–
µs
Turn-Off Fall Time
t
f
V
GE1
= -V
GE2
= 15V, R
G(off)
= 3.3Ω,
–
0.3
–
µs
Turn-Off Switching Energy
E
off
Inductive load
–
360
–
mJ/P
Reverse Recovery Time**
I
rr
V
CC
= 850V, I
E
= 1200A,
–
560
–
Amperes
Reverse Recovery Time**
t
rr
di
e
/dt = -2900A/µs,
–
1.0
–
µs
Reverse Recovery Charge**
Q
rr
T
j
= 125°C,
–
300
–
µC
Reverse Recovery Energy**
E
rec
Inductive Load
–
220
–
mJ/P
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
***The symbols represent characteristics of the clamp diode (Clamp Di).
Thermal Characteristics, T
j
= 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
R
th(j-c)
Q
Per IGBT
–
–
19.0
K/kW
Thermal Resistance, Junction to Case
R
th(j-c)
D
Per FWDi
–
–
42.0
K/kW
Thermal Resistance, Junction to Case
R
th(j-c)
D
Clamp Di
—
—
42.0
K/kW
Contact Thermal Resistance, Case to Fin
R
th(c-f)
Per Module, Thermal Grease Applied
–
16.0
–
K/kW
Mechanical Characteristics, T
j
= 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Comparative Tracking Index
CTI
–
600
–
–
–
Clearance
–
–
1
9.5 – – mm
Creepage Distance
–
–
32
.0
– – mm
Internal Inductance
L
C-E(int)
–
–
30
–
nH
Internal Lead Resistance
R
C-E(int)
–
–
0.28
–
mΩ