C&H Technology CM1200E4C-34N - Manual (Page 6)

CM1200E4C-34N
Chopper IGBTMOD™ HVIGBT Module
1200 Amperes/1700 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
5 8/05
COLLECTOR CURRENT, I
C
, (AMPERES)
SWITCHING TIME,
t f , (ns)
FALL TIME VS.
COLLECTOR CURRENT
(TYPICAL)
COLLECTOR CURRENT, I
C
, (AMPERES)
SWITCHING TIME,
t r , (ns)
RISE TIME VS.
COLLECTOR CURRENT
(TYPICAL)
1400
600
400
200
800
1200
1000
0
2500 1500 2000 1000 500
COLLECTOR CURRENT, I
C
, (AMPERES)
SWITCHING LOSS,
E
of
f , (mJ/PULSE)
SWITCHING LOSS (OFF) VS.
COLLECTOR CURRENT
(TYPICAL)
0
COLLECTOR CURRENT, I C , (AMPERES)
SWITCHING LOSS,
E on
, (mJ/PULSE)
SWITCHING LOSS (ON) VS.
COLLECTOR CURRENT
(TYPICAL)
SWITCHING LOSS,
E
of
f
, (mJ/PULSE)
GATE RESISTANCE, R
G
, ( Ω)
SWITCHING LOSS,
E
on
, (mJ/PULSE)
GATE RESISTANCE, R
G
, ( Ω)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
CAP
A
C
IT
ANCE,
C
ie
s
, C
oe
s
, C
res
, (pF)
10 -1 10 0 10 1 10 2
CAPACITANCE VS.
COLLECTOR-EMITTER VOLTAGE
(TYPICAL)
10 3
10 1
10 0
10 2
C
ies
C
oes
C
res
V GE = 15V
f = 100kHz
T
j
= 25°C
COLLECTOR-EMITTER VOLTAGE,
V
CE
S
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10 1
10 0
10 -1
V
CC
= 850V
V GE = ±15V
R
G(off)
= 3.3 Ω
R
G(on)
= 0.6 Ω
L
S
= 150nH
T j = 125°C
1400
600
400
200
800
1200
1000
0
2500 1500 2000 1000 500 0
V
CC
= 850V
V
GE
= ±15V
R G(off) = 3.3 Ω
R
G(on)
= 0.6 Ω
L
S
= 150nH
T
j
= 125°C
2500
2000
1500
1000
0
500
14 6 12 10 8 4 2 0
2500
2000
1500
1000
0
500
14 6 12 10 8 4 2 0
4.0
2.5
2.0
1.5
3.0
3.5
1.0
0
0.5
2500 1500 2000 1000 500 0
V
CC
= 850V
V
GE
= ±15V
I C = 1200A
L
S
= 150nH
T
j
= 125°C
V
CC
= 850V
V
GE
= ±15V
I C = 1200A
L
S
= 150nH
T
j
= 125°C
10 1
10 0
10 -1
V GE = 15V
T
j
= 25°C
T
j
= 125°C
SWITCHING LOSS (OFF) VS.
GATE RESISTANCE
(TYPICAL)
SWITCHING LOSS (ON) VS.
GATE RESISTANCE
(TYPICAL)
0 1500 2000 1000 500 3000 2500
V
CC
= 850V
V
GE
= ±15V
R G(off) = 3.3 Ω
R
G(on)
= 0.6 Ω
L
S
= 150nH
T
j
= 125°C
0 1500 2000 1000 500 3000 2500
V
CC
= 850V
V
GE
= ±15V
R G(off) = 3.3 Ω
R
G(on)
= 0.6 Ω
L
S
= 150nH
T
j
= 125°C
GATE CHARGE, Q
G
, (nC)
GATE-EMITTER VOLTAGE,
V
GE
, (VOLTS
)
GATE CHARGE, V
GE
20
0 2 4 6 8 10
16
12
8
4
0
I
C
= 1200A
V
CC
= 850V
T
j
= 25°C