C&H Technology 25MT060WFAPbF - Manual (Page 3)

www.vishay.com For technical questions, contact: [email protected] Document Number: 94539
2 Revision: 30-May-08
25MT060WFAPbF
Vishay High Power Products "Full-Bridge" IGBT MTP
(Warp Speed IGBT), 50 A
Note
(1) I
CES
includes also opposite leg overall leakage
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
(BR)CES
V
GE
= 0 V, I
C
= 250 µA 600 - - V
Temperature coefficient of breakdown voltage
ΔV
(BR)CES
/
ΔT
J
V
GE
= 0 V, I
C
= 4 mA (25 to 125 °C) - + 0.6 - V/°C
Collector to emitter saturation voltage V
CE(on)
V
GE
= 15 V, I
C
= 25 A - 2.22 3.14
V
V
GE
= 15 V, I
C
= 50 A - 2.43 3.25
V
GE
= 15 V, I
C
= 25 A, T
J
= 150 °C - 1.65 1.93
V
GE
= 15 V, I
C
= 50 A, T
J
= 150 °C - 2.08 2.45
Gate threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 250 µA 3 - 6
Temperature coefficient of threshold voltage
ΔV
GE(th)
/
ΔT
J
V
CE
= V
GE
, I
C
= 250 µA (25 to 125 °C) - - 17 - mV/°C
Transconductance g
fe
V
CE
= 100 V, I
C
= 25 A, PW = 80 µs - 43 - S
Zero gate voltage collector current I
CES
(1)
V
GE
= 0 V, V
CE
= 600 V, T
J
= 25 °C - - 250 µA
V
GE
= 0 V, V
CE
= 600 V, T
J
= 150 °C - - 10 mA
Gate to emitter leakage current I
GES
V
GE
= ± 20 V - - ± 250 nA
Diode forward voltage drop V
FM
I
C
= 25 A - 1.36 1.64
V
I
C
= 50 A - 1.57 1.93
I
C
= 25 A; T
J
= 150 °C - 1.19 1.42
I
C
= 50 A; T
J
= 150 °C - 1.48 1.80
SWITCHING CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) Q
g I
C
= 25 A
V
CC
= 480 V
V
GE
= 15 V
- 175 263
nC Gate to emitter charge (turn-on) Q
ge
- 27 41
Gate to collector charge (turn-on) Q
gc
- 71 107
Turn-on switching loss E
on R
g
= 5 Ω, I
C
= 25 A
V
CC
= 480 V
V
GE
= ± 15 V
- 0.13 0.20
mJ
Turn-off switching loss E
off
- 0.42 0.62
Total switching loss E
tot
- 0.55 0.82
Turn-on switching loss E
on R
g
= 5 Ω, I
C
= 25 A
V
CC
= 480 V
V
GE
= ± 15 V, T
J
= 125 °C
- 0.39 0.59
Turn-off switching loss E
off
- 0.49 0.74
Total switching loss E
tot
- 0.88 1.32
Input capacitance C
ies V
GE
= 0 V
V
CC
= 30 V
f = 1.0 MHz
- 3610 5415
pF Output capacitance C
oes
- 714 1071
Reverse transfer capacitance C
res
- 58 87
Diode reverse recovery time t
rr
V
R
= 200 V;
I
C
= 25 A;
dI/dt = 200 A/µs
- 50 - ns
Diode peak reverse current I
rr
- 4.5 - A
Diode Recovery charge Q
rr
- 112 - nC
Diode peakrate of fall of
recovery during t
b
dI
(rec)M
/dt - 250 - A/µs