Vishay high power products, Full-bridge" igbt mtp (warp speed igbt), 50 a – C&H Technology 25MT060WFAPbF User Manual

Page 5

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Document Number: 94539

4

Revision: 30-May-08

25MT060WFAPbF

Vishay High Power Products

"Full-Bridge" IGBT MTP

(Warp Speed IGBT), 50 A

Fig. 4 - Maximum Transient Thermal Impedance,

Junction to Case (Diode)

Fig. 5 - Typical Capacitance vs.

Collector to Emitter Voltage

Fig. 6 - Typical Gate Charge vs.

Gate to Emitter Voltage

Fig. 7 - Typical Switching Losses vs.

Gate Resistance

Fig. 8 - Typical Switching Losses vs.

Junction Temperature

1E-006

1E-005

0.0001

0.001

0.01

0.1

1

0.001

0.01

0.1

1

10

th

J

C

0.20

0.10

D = 0.50

0.01

0.02

0.05

SINGLE PULSE
( THERMAL RESPONSE )

Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc

t

1

, Rectangular Pulse Duration (sec)

Thermal Response (Z

thJC

)

0.10

0.01

0.02

0.05

1

10

100

1000

VCE (V)

0

1000

2000

3000

4000

5000

6000

7000

C

a

p

a

c

it

a

n

c

e

(p

F

)

Cies

Coes

Cres

VGE = 0V, f = 1 MHZ
C

ies

= C

ge

+C

gc

, C

ce

SHORTED

C

res

= C

gc

C

oes

= C

ce

+ C

gc

0

50

100

150

200

QG, Total Gate Charge (nC)

0.0

4.0

8.0

12.0

16.0

V

G

E

,

G

a

te

-t

o

-E

m

it

te

r

V

o

lt

a

g

e

(V

)

IC= 25A
VCE = 480V

0

10

20

30

40

50

60

RG, Gate Resistance ( Ω)

0.0

0.5

1.0

1.5

S

w

it

c

h

in

g

L

o

s

s

e

s

(m

J

)

VCC = 480V
VGE = 15V
TJ = 25°C
I C = 25A

EOFF

EON

20

40

60

80

100

120

140

160

TJ, Junction Temperature (°C)

0.1

1

10

T

o

ta

l

S

w

it

c

h

in

g

L

o

s

s

e

s

(m

J

)

RG = 5.0Ω
VGE = 15V
VCC = 480V

IC = 50A

IC = 25A

IC = 12.5A

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