C&H Technology CM1800HCB-34N User Manual
Page 3
CM1800HCB-34N
Single IGBTMOD™ HVIGBT Module
1800 Amperes/1700 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
2
12/08
Absolute Maximum Ratings,
T
j
= 25 °C unless otherwise specified
Ratings
Symbol
CM1800HCB-34N
Units
Junction Temperature
T
j
-40 to 150
°C
Storage Temperature
T
stg
-40 to 125
°C
Operating Temperature
T
op
-40 to 125
°C
Collector-Emitter Voltage (V
GE
= 0V)
V
CES
1700
Volts
Gate-Emitter Voltage (V
CE
= 0V)
V
GES
±20
Volts
Collector Current (DC, T
c
= 80°C)
I
C
1800
Amperes
Peak Collector Current (Pulse)
I
CM
3600*
Amperes
Diode Forward Current** (T
c
= 25°C)
I
E
1800
Amperes
Diode Forward Surge Current** (Pulse)
I
EM
3600*
Amperes
Maximum Collector Dissipation (T
c
= 25°C, IGBT Part, T
j
≤ 150°C)
P
C
13800
Watts
Max. Mounting Torque M8 Terminal Screws
–
115
in-lb
Max. Mounting Torque M6 Mounting Screws
–
53
in-lb
Max. Mounting Torque M4 Auxiliary Terminal Screws
–
17
in-lb
Max. Turn-off Switching Current (V
CC
≤ 1200V, V
GE
= ±15V, T
j
= 125°C)
–
3600
Amperes
Short-circuit Capability, Max. Pulse Width (V
CC
≤ 1000V, V
GE
= ±15V, T
j
= 125°C)
–
10
μs
Max. Reverse Recovery Instantaneous Power**
–
540
kW
(V
CC
≤ 1200V, di
E
/dt ≤ t.b.d A/μs, T
j
= 125°C)
Module Weight (Typical)
–
1.5
kg
V Isolation (Charged Part to Baseplate, AC 60Hz 1 min.)
V
iso
4000
Volts
* Pulse width and repetition rate should be such that device junction temperature (T
j
) does not exceed T
op(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics,
T
j
= 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
I
CES
V
CE
= V
CES
, V
GE
= 0V, T
j
= 25°C
–
–
8.0
mA
V
CE
= V
CES
, V
GE
= 0V, T
j
= 125°C
–
–
16.0
mA
Gate-Emitter Threshold Voltage
V
GE(th)
I
C
= 180mA, V
CE
= 10V
5.0
6.0
7.0
Volts
Gate Leakage Current
I
GES
V
GE
= V
GES
, V
CE
= 0V
–
–
0.5
μA
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
= 1800A*, V
GE
= 15V, T
j
= 25°C
–
2.0
–
Volts
I
C
= 1800A*, V
GE
= 15V, T
j
= 125°C
–
2.2
–
Volts
Total Gate Charge
Q
G
V
CC
= 900V, I
C
= 1800A, V
GE
= 15V
–
13.6
–
μC
Emitter-Collector Voltage**
V
EC
I
E
= 1800A*, V
GE
= 0V, T
j
= 25°C
–
2.35
–
Volts
I
E
= 1800A*, V
GE
= 0V, T
j
= 125°C
–
1.85
–
Volts
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).