C&H Technology CM1800HCB-34N - Manual (Page 5)

CM1800HCB-34N
Single IGBTMOD™ HVIGBT Module
1800 Amperes/1700 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
4 12/08
TIME, (s)
TRANSIENT IMPED
ANCE, Rth
(j-c)
10 -3 10 -2 10 -1 10 0 10 1
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDI)
1.2
1.0
0.4
0
0.2
0.6
0.8
SINGLE PULSE
T
C
= 25°C
IGBT = R th(j-c) Q =
9°K/kW
FWDI = R
th(j-c)
D =
13°K/kW
COLLECTOR-EMITTER VOLTAGE, V
CES
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
4.0
2.5
2.0
1.5
3.0
3.5
1.0
0
0.5
3500 3000 2000 1000 2500 1500 500 0
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
C
AP
A
CI
TANCE, C
ies
, C
oes
, C
res
, (pF)
10 -1 10 0 10 1 10 2
CAPACITANCE VS.
COLLECTOR-EMITTER VOLTAGE
(TYPICAL)
10 4
10 3
10 1
10 0
10 2
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
FREE-WHEEL DIODE FORWARD
CHARACTERISTICS (TYPICAL)
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
EMITTER CURRENT, I
E
, (AMPERES)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
20
16
12
8
4
0
HALF-BRIDGE SWITCHING
ENERGY CHARACTERISTICS
(TYPICAL)
3000
HALF-BRIDGE SWITCHING
ENERGY CHARACTERISTICS
(TYPICAL)
200
0
1200
600
800
1000
0 3000 2500 1000 500 1500 2000
400
FREE-WHEEL DIODE REVERSE RECOVERY
ENERGY CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY ENERGY, E
rec
, (mJ/PULSE)
EMITTER CURRENT, I E , (AMPERES) GATE RESISTANCE, R G , (Ω)
REVERSE RECOVERY SWITCHING
ENERGY VS. GATE RESISTANCE
CHARACTERISTICS (TYPICAL)
C
ies
C
oes
C
res
V
GE
= 0V
f = 100kHz
T
j
= 25°C
GATE CHARGE, Q
G
, (µC)
GATE CHARGE, V
GE
0 4 8 16 12 20
I
C
= 1800A
V CC = 900V
T
j
= 25°C
200
400
600
800
1000
1800
COLLECTOR CURRENT, I
C
, (AMPERES)
SWITCHING ENERGY, (mJ/P)
0 1000 500 1500 2000 2500
1600
1400
1200
V
CC
= 900V
V
GE
= ±15V
R G(on) = 0.7Ω
L
S
= 100nH
T
j
= 125°C
0
V
CC
= 900V
V
GE = ±15V
R G(on) = 0.7Ω
R
G(off)
= 1.7Ω
L
S
= 100nH
Tj = 125°C
Inductive Load
4.0
2.5
2.0
1.5
3.0
3.5
1.0
0
0.5
3500 3000 2000 1000 2500 1500 500 0
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
E
on
E
off
5
500
1000
1500
2000
4000
GATE RESISTANCE, R
G
, (Ω)
SWITCHING ENERGY, (mJ/P)
−
dv/dt
(off)
, (V/
µs)
0 2 1 3 4
3500
3000
2500
0
500
1000
1500
2000
4000
3500
3000
2500
0
V
CC
= 900V
V
GE = ±15V
I
C
= 1800A
L
S
= 100nH
Tj = 125°C
dv/dt
(off) = 20-80%
Inductive Load
V
CC
= 900V
V
GE = ±15V
I C = 1800A
L
S
= 100nH
Tj = 125°C
dv/dt
(off) = 20-80%
Inductive Load
E
on
E off
5
100
200
300
400
800
SWITCHING ENERGY, (mJ/P)
−
dv/dt
(rec)
, (V/
µs)
0 2 1 3 4
700
600
500
0
1000
2000
3000
4000
8000
7000
6000
5000
0