Mitsubishi hvigbt modules – C&H Technology CM1200HC-66H User Manual
Page 6
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200HC-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
10
2
10
3
10
1
10
0
10
0
10
-1
2 3
5 7
10
1
10
2
2 3
5 7
2 3
5 7
2
3
5
7
2
3
5
7
2
3
5
7
CAPACITANCE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE (V)
CAPACITANCE
( nF
)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
GATE CHARGE (
µ
C)
GATE-EMITTER VOLTAGE
( V
)
COLLECTOR CURRENT (A)
SWITCHING ENERGIES
( J/pulse
)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
GATE RESISTANCE (
Ω
)
SWITCHING ENERGIES
( J/pulse
)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
20
16
12
8
4
0
9
6
3
0
12
2.5
3
2
1.5
1
0.5
0
1200
1600
800
400
0
2000
2400
6
5
4
3
2
0
5
10
0
15
20
1
V
CC
= 1650V, I
C
= 1200A
T
j
= 25
°
C
E
on
E
off
E
rec
E
off
C
ies
C
oes
C
res
V
CC
= 1650V, I
C
= 1200A
V
GE
=
±
15V
T
j
= 125
°
C, Inductive load
V
CC
= 1650V, V
GE
=
±
15V
R
G(on)
= R
G(off)
= 1.6
Ω
T
j
= 125
°
C, Inductive load
E
on
V
GE
= 0V, T
j
= 25
°
C
f = 100kHz
E
rec