Mitsubishi hvigbt modules – C&H Technology CM1200HC-66H User Manual
Page 7
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200HC-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
10
-2
10
-3
2 3 5 7
10
-1
2 3 5 7
10
0
2 3 5 7
10
1
2 3 5 7
COLLECTOR CURRENT (A)
SWITCHING TIMES
(
µ
s
)
TIME (s)
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT (A)
REVERSE RECOVERY TIME
(
µ
s
)
FREE-WHEEL DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
NORMALIZED TRANSIENT THERMAL IMPEDANCE
1.2
1.0
0.8
0.6
0.4
0
0.2
REVERSE RECOVERY CURRENT
( A
)
10
1
10
2
10
0
10
-1
10
2
10
1
2 3
5 7
10
3
10
4
2 3
5 7
2 3
5 7
2
3
5
7
2
3
5
7
2
3
5
7
10
3
10
4
10
2
10
1
10
1
10
2
10
0
10
-1
10
2
10
1
2 3
5 7
10
3
10
4
2 3
5 7
2 3
5 7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
Single Pulse, T
C
= 25
°
C
R
th(j–c)Q
= 8.5K/kW
R
th(j–c)R
= 17K/kW
V
CC
= 1650V, V
GE
=
±
15V
R
G(on)
=
R
G(off)
= 1.6
Ω
T
j
= 125
°
C, Inductive load
V
CC
= 1650V, V
GE
=
±
15V
R
G(on)
=
R
G(off)
= 1.6
Ω
T
j
= 125
°
C, Inductive load
l
rr
t
rr
t
d(off)
t
d(on)
t
f
t
r