Vishay semiconductors – C&H Technology VS-100MT1.0P.PbF Series User Manual
Page 4
VS-40MT1.0P.PbF, VS-70MT1.0P.PbF, VS-100MT1.0P.PbF Series
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Vishay Semiconductors
Revision: 30-Oct-13
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Document Number: 94538
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Fig. 1 - Current Rating Characteristics
Fig. 2 - On-State Voltage Drop Chracteristics
Fig. 3 - Maximum Non-Repetitive Surge Current
Fig. 4 - Maximum Non-Repetitive Surge Current
Fig. 5 - Current Rating Nomogram (1 Module Per Heatsink)
Total Output Current (A)
Maximum Allowable Case Temperature (°C)
80
90
100
110
120
130
140
150
160
0
10
20
30
40
50
120˚
(Rect)
40MT...P
R (DC) = 0.27 K/W
Per Module
thJC
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
1
10
100
1000
0
1
2
3
4
5
6
Tj = 150˚C
Tj = 25˚C
40MT...P
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
50
100
150
200
250
1
10
100
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = 150˚C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
40MT...P
Per Junction
Pulse Train Duration(s)
Peak Half Sine Wave On-state Current (A)
50
100
150
200
250
300
0.01
0.1
1
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T j = 150˚C
No Voltage Reapplied
Rated V rrm Reapplied
40MT...P
Per Junction
Maximum Allowable Ambient Temperature (°C)
Total Output Current (A)
Maximum Total Power Loss (W)
0
30
60
90
120
150
RthSA = 0.1 K/W - Delta R
0.3 K/W
0.4 K/W
0.5 K/W
1 K/W
0.2 K/W
0
50
100
150
200
250
0
10
20
30
40
50
60
120˚
(Rect)
Tj = 150˚C
40MT...P