Rainbow Electronics AT29LV040A - Manual

1
Features
• Single Voltage, Range 3V to 3.6V Supply
• 3-volt Only Read and Write Operation
• Software Protected Programming
• Fast Read Access Time - 150 ns
• Low Power Dissipation
– 15 mA Active Current
– 40 µA CMOS Standby Current
• Sector Program Operation
– Single Cycle Reprogram (Erase and Program)
– 2048 Sectors (256 Bytes/Sector)
– Internal Address and Data Latches for 256 Bytes
• Two 16K Bytes Boot Blocks with Lockout
• Fast Sector Program Cycle Time - 20 ms Max.
• Internal Program Control and Timer
• DATA Polling for End of Program Detection
• Typical Endurance > 10,000 Cycles
• CMOS and TTL Compatible Inputs and Outputs
• Commercial and Industrial Temperature Ranges
Description
The AT29LV040A is a 3-volt only in-system Flash Programmable and Erasable Read
Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by
8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology,
the device offers access times to 150 ns, and a low 54 mW power dissipation. When
the device is deselected, the CMOS standby current is less than 40
µA. The device
endurance is such that any sector can typically be written to in excess of 10,000 times.
The programming algorithm is compatible with other devices in Atmel’s 3-volt only
Flash memories.
4-megabit
(512K x 8)
3-volt Only
256-byte Sector
Flash Memory
AT29LV040A
Rev. 0334F–FLASH–05/02
PLCC Top View
Pin Configurations
Pin Name Function
A0 - A18 Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC No Connect
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
4 3 2 1
32 31 30
14 15 16 17 18 19 20
I/O1 I/O2 GND I/O3 I/O4 I/O5 I/O6
A12 A15 A16 A18 VCC WE A17
TSOP Top View
Type 1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A11
A9
A8
A13
A14
A17
WE
VCC
A18
A16
A15
A12
A7
A6
A5
A4
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3