Rainbow Electronics AT29LV512 - Manual

1
Features
• Single Supply Voltage, Range 3V to 3.6V
• 3-volt Only Read and Write Operation
• Software Protected Programming
• Low-power Dissipation
– 15 mA Active Current
– 40 µA CMOS Standby Current
• Fast Read Access Time – 120 ns
• Sector Program Operation
– Single-cycle Reprogram (Erase and Program)
– 512 Sectors (128 Bytes/Sector)
– Internal Address and Data Latches for 128 Bytes
• Fast Sector Program Cycle Time – 20 ms Max.
• Internal Program Control and Timer
• DATA Polling for End of Program Detection
• Typical Endurance > 10,000 Cycles
• CMOS and TTL Compatible Inputs and Outputs
• Commercial and Industrial Temperature Ranges
Description
The AT29LV512 is a 3-volt-only in-system Flash programmable erasable read-only
memory (PEROM). Its 512K of memory is organized as 65,536 words by 8 bits. Man-
ufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers
access times to 120 ns with power dissipation of just 54 mW over the commercial tem-
perature range. When the device is deselected, the CMOS standby current is less
than 40
µA. The device endurance is such that any sector can typically be written to in
excess of 10,000 times.
512K (64K x 8)
3-volt Only
Flash Memory
AT29LV512
Rev. 0177M–05/02
Pin Configurations
Pin Name Function
A0 - A15 Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC No Connect
TSOP Top View
Type 1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A11
A9
A8
A13
A14
NC
WE
VCC
NC
NC
A15
A12
A7
A6
A5
A4
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
PLCC Top View
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
4 3 2 1
32 31 30
14 15 16 17 18 19 20
I/O1 I/O2 GND I/O3 I/O4 I/O5 I/O6
A12 A15 NC NC VCC WE NC