Rainbow Electronics AT28C0101 - Manual

1
Features
• Fast Read Access Time - 120 ns
• Automatic Page Write Operation
Internal Address and Data Latches for 128-Bytes
Internal Control Timer
• Fast Write Cycle Time
Page Write Cycle Time - 10 ms Maximum
1 to 128-Byte Page Write Operation
• Low Power Dissipation
80 mA Active Current
300
µA CMOS Standby Current
• Hardware and Software Data Protection
• DATA Polling for End of Write Detection
• High Reliability CMOS Technology
Endurance: 10 4 or 10 5 Cycles
Data Retention: 10 Years
• Single 5V
±
10% Supply
• CMOS and TTL Compatible Inputs and Outputs
• JEDEC Approved Byte-Wide Pinout
Description
The AT28C010 is a high-performance Electrically Erasable and Programmable Read
Only Memory. Its one megabit of memory is organized as 131,072 words by 8 bits.
Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers
access times to 120 ns with power dissipation of just 440 mW. When the device is
deselected, the CMOS standby current is less than 300
µ
A.
Rev. 0010C–10/98
Pin Configuration
Pin Name Function
A0 - A16 Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC No Connect
AT28C010 Mil
1-Megabit
(128K x 8)
Paged Parallel
EEPROMs
AT28C010
Military
CERDIP, FLATPACK
Top View
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
NC
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
VCC
WE
NC
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
PGA
Top View
44 LCC
Top View
7
8
9
10
11
12
13
14
15
16
17
39
38
37
36
35
34
33
32
31
30
29
A12
A7
A6
A5
NC
NC
NC
A4
A3
A2
A1
A13
A8
A9
A11
NC
NC
NC
NC
OE
A10
CE
6 5 4 3 2 1
44 43 42 41 40
18 19 20 21 22 23 24 25 26 27 28
A0
I/O0 I/O1 I/O2 VSS
NC
I/O3 I/O4 I/O5 I/O6 I/O7
A15 A16 NC NC NC NC VCC WE NC NC A14
32 LCC
Top View
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
4 3 2 1
32 31 30
14 15 16 17 18 19 20
I/O1 I/O2 GND I/O3 I/O4 I/O5 I/O6
A12 A15 A16 NC VCC WE NC
(continued)