Rainbow Electronics IRLTS2242TRPBF - Manual (Page 2)

IRLTS2242PbF
2 www.irf.com
G
D
S
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Pulse width  400μs; duty cycle  2%.
ƒ When mounted on 1 inch square copper board.
Thermal Resistance
Parameter Typ. Max. Units
R
JA
Junction-to-Ambient e ––– 62.5 °C/W
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage -20 ––– ––– V
V
DSS
/ T
J
Breakdown Voltage Temp. Coefficient ––– 9.4 ––– mV/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 26 32
––– 45 55
V
GS(th)
Gate Threshold Voltage -0.4 ––– -1.1 V
V
GS(th)
Gate Threshold Voltage Coefficient ––– -3.8 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– -1.0
––– ––– -150
I
GSS
Gate-to-Source Forward Leakage ––– ––– -100
Gate-to-Source Reverse Leakage ––– ––– 100
gfs Forward Transconductance 8.5 ––– ––– S
Q
g Total Gate Charge ––– 12 –––
Q
gs Gate-to-Source Charge ––– 1.5 –––
Q
gd Gate-to-Drain Charge ––– 4.3 –––
R
G
Gate Resistance ––– 17 ––– 
t
d(on)
Turn-On Delay Time ––– 5.8 –––
t
r
Rise Time ––– 18 –––
t
d(off)
Turn-Off Delay Time ––– 81 –––
t
f
Fall Time ––– 68 –––
C
iss
Input Capacitance ––– 905 –––
C
oss
Output Capacitance ––– 280 –––
C
rss
Reverse Transfer Capacitance ––– 200 –––
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode) Ù
V
SD
Diode Forward Voltage ––– ––– -1.2 V
t
rr
Reverse Recovery Time ––– 41 62 ns
Q
rr
Reverse Recovery Charge ––– 16 24 nC
t
on
Forward Turn-On Time Time is dominated by parasitic Inductance
V
DS
= V
GS
, I
D
= -10μA
V
GS
= -2.5V, I
D
= -5.5A d
m 
V
DD
= -10V, V
GS
= -4.5V
V
DS
= -10V
R
G
= 6.8 
V
DS
= -10V, I
D
= -5.5A
V
DS
= -16V, V
GS
= 0V, T
J
= 125°C
μA
I
D
= -5.5A
I
D
= -5.5A
V
GS
= 0V
V
DS
= -10V
V
DS
= -16V, V
GS
= 0V
T
J
= 25°C, I
F
= -5.5A, V
DD
= -16V
di/dt = 100A/μs dÃ
T
J
= 25°C, I
S
= -5.5A, V
GS
= 0V d
showing the
integral reverse
p-n junction diode.
Conditions
ƒ = 1.0KHz
Conditions
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= -1mA
V
GS
= -4.5V, I
D
= -6.9A d
––– ––– -55
––– ––– -2.0
MOSFET symbol
nA
ns
A
pF
nC V
GS
= -4.5V
V
GS
= -12V
V
GS
= 12V