Ge energy, 6a austin microlynx, Ii: non-isolated dc-dc power modules – GE Industrial Solutions 6A Austin MicroLynx II User Manual
Page 3: Data sheet, Electrical specifications, Continued)
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GE Energy
Data Sheet
6A Austin MicroLynx
TM
II: Non-Isolated DC-DC Power Modules
8.3Vdc –14Vdc input; 0.75Vdc to 5.5Vdc output; 6A Output Current
October 16, 2012
©2012 General Electric Company. All rights reserved.
Page 3
Electrical Specifications
(continued)
Parameter
Device
Symbol
Min
Typ
Max
Unit
Output Voltage Set-point
All
V
O, set
-2.0 V
O, set
+2.0 %
V
O, set
(V
IN
=V
IN, min
, I
O
=I
O, max
, T
A
=25°C)
Output Voltage
All
V
O, set
-2.5%
⎯
+3.5% %
V
O, set
(Over all operating input voltage, resistive load,
and temperature conditions until end of life)
Adjustment Range
All
V
O
0.7525 5.5 Vdc
Selected by an external resistor
Output
Regulation
Line (V
IN
=V
IN, min
to V
IN, max
) All
⎯
0.3
⎯
% V
O, set
Load (I
O
=I
O, min
to I
O, max
) All
⎯
0.4
⎯
% V
O, set
Temperature (T
ref
=T
A, min
to T
A, max
) All
⎯
0.4
⎯
% V
O, set
Output Ripple and Noise on nominal output
(V
IN
=V
IN, nom
and I
O
=I
O, min
to I
O, max
Cout = 1μF ceramic//10μFtantalum
capacitors)
RMS (5Hz to 20MHz bandwidth)
All
⎯
15 30 mV
rms
Peak-to-Peak (5Hz to 20MHz bandwidth)
All
⎯
30 75
mV
pk-pk
External Capacitance
ESR ≥ 1 mΩ All
C
O, max
⎯
⎯
1000
μF
ESR ≥ 10 mΩ All
C
O, max
⎯
⎯
3000
μF
Output Current
All
I
o
0 6 Adc
Output Current Limit Inception (Hiccup Mode )
All
I
O, lim
⎯
200
⎯
% I
o
(V
O
= 90% of V
O, set
)
Output Short-Circuit Current
All
I
O, s/c
⎯
2
⎯
Adc
(V
O
≤250mV) ( Hiccup Mode )
Efficiency V
O, set
= 1.2Vdc
η
80.0
%
V
IN
= V
IN, nom
, T
A
=25°C V
O,set
= 1.5Vdc
η
83.0
%
I
O
=I
O, max ,
V
O
= V
O,set
V
O,set
= 1.8Vdc
η
83.5
%
V
O,set
= 2.5Vdc
η
86.5
%
V
O,set
= 3.3Vdc
η
89.0
%
V
O,set
= 5.0Vdc
η
91.0
%
Switching Frequency
All
f
sw
⎯
300
⎯
kHz
Switching Frequency (-30 Option)
All
f
sw
288 320 352 kHz
Dynamic Load Response
(dIo/dt=2.5A/
μs; V
IN
= V
IN, nom
; T
A
=25°C)
All V
pk
⎯
200
⎯
mV
Load Change from Io= 50% to 100% of Io,max;
1μF ceramic// 10 μF tantalum
Peak Deviation
Settling Time (Vo<10% peak deviation)
All t
s
⎯
25
⎯
μs
(dIo/dt=2.5A/
μs; V
IN
= V
IN, nom
; T
A
=25°C)
All V
pk
⎯
200
⎯
mV
Load Change from Io= 100% to 50%of Io,max:
1μF ceramic// 10 μF tantalum
Peak Deviation
Settling Time (Vo<10% peak deviation)
All t
s
⎯
25
⎯
μs