Ge energy, 6a austin microlynx, Ii: non-isolated dc-dc power modules – GE Industrial Solutions 6A Austin MicroLynx II User Manual

Page 3: Data sheet, Electrical specifications, Continued)

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GE Energy

Data Sheet

6A Austin MicroLynx

TM

II: Non-Isolated DC-DC Power Modules

8.3Vdc –14Vdc input; 0.75Vdc to 5.5Vdc output; 6A Output Current

October 16, 2012

©2012 General Electric Company. All rights reserved.

Page 3

Electrical Specifications

(continued)

Parameter

Device

Symbol

Min

Typ

Max

Unit

Output Voltage Set-point

All

V

O, set

-2.0 V

O, set

+2.0 %

V

O, set

(V

IN

=V

IN, min

, I

O

=I

O, max

, T

A

=25°C)

Output Voltage

All

V

O, set

-2.5%

+3.5% %

V

O, set

(Over all operating input voltage, resistive load,

and temperature conditions until end of life)

Adjustment Range

All

V

O

0.7525 5.5 Vdc

Selected by an external resistor

Output

Regulation

Line (V

IN

=V

IN, min

to V

IN, max

) All

0.3

% V

O, set

Load (I

O

=I

O, min

to I

O, max

) All

0.4

% V

O, set

Temperature (T

ref

=T

A, min

to T

A, max

) All

0.4

% V

O, set

Output Ripple and Noise on nominal output

(V

IN

=V

IN, nom

and I

O

=I

O, min

to I

O, max

Cout = 1μF ceramic//10μFtantalum

capacitors)

RMS (5Hz to 20MHz bandwidth)

All

15 30 mV

rms

Peak-to-Peak (5Hz to 20MHz bandwidth)

All

30 75

mV

pk-pk

External Capacitance

ESR ≥ 1 mΩ All

C

O, max

1000

μF

ESR ≥ 10 mΩ All

C

O, max

3000

μF

Output Current

All

I

o

0 6 Adc

Output Current Limit Inception (Hiccup Mode )

All

I

O, lim

200

% I

o

(V

O

= 90% of V

O, set

)

Output Short-Circuit Current

All

I

O, s/c

2

Adc

(V

O

≤250mV) ( Hiccup Mode )

Efficiency V

O, set

= 1.2Vdc

η

80.0

%

V

IN

= V

IN, nom

, T

A

=25°C V

O,set

= 1.5Vdc

η

83.0

%

I

O

=I

O, max ,

V

O

= V

O,set

V

O,set

= 1.8Vdc

η

83.5

%

V

O,set

= 2.5Vdc

η

86.5

%

V

O,set

= 3.3Vdc

η

89.0

%

V

O,set

= 5.0Vdc

η

91.0

%

Switching Frequency

All

f

sw

300

kHz

Switching Frequency (-30 Option)

All

f

sw

288 320 352 kHz

Dynamic Load Response

(dIo/dt=2.5A/

μs; V

IN

= V

IN, nom

; T

A

=25°C)

All V

pk

200

mV

Load Change from Io= 50% to 100% of Io,max;

1μF ceramic// 10 μF tantalum

Peak Deviation

Settling Time (Vo<10% peak deviation)

All t

s

25

μs

(dIo/dt=2.5A/

μs; V

IN

= V

IN, nom

; T

A

=25°C)

All V

pk

200

mV

Load Change from Io= 100% to 50%of Io,max:
1μF ceramic// 10 μF tantalum

Peak Deviation

Settling Time (Vo<10% peak deviation)

All t

s

25

μs

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