Diodes ZXTC4591AMC - Manual (Page 2)

ZXTC4591AMC
Document number: DS31925 Rev. 4 - 2
2 of 9
www.diodes.com
October 2012
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A Product Line of
Diodes Incorporated
ZXTC4591AMC
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Parameter Symbol NPN PNP Unit
Collector-Base Voltage V
CBO
40 -40
V Collector-Emitter Voltage V
CEO
40 -40
Emitter-Base Voltage V
EBO
7 -7
Peak Pulse Current I
CM
3 -3
A
Continuous Collector Current
(Notes 6 & 9)
I C
2 -1.5
(Notes 7 & 9) 2.5 -2
Base Current I
B
300 mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol NPN PNP Unit
Power Dissipation
Linear Derating Factor
(Notes 6 & 9)
P D
1.5
12
W
mW/
°C
(Notes 7 & 9)
2.45
19.6
(Notes 8 & 9)
1.13
8
(Notes 8 & 10)
1.7
13.6
Thermal Resistance, Junction to Ambient
(Notes 6 & 9)
R θJA
83.3
°C/W
(Notes 7 & 9) 51.0
(Notes 8 & 9) 111
(Notes 8 & 10) 73.5
Thermal Resistance, Junction to Lead (Notes 9 & 11) R θJL 17.1
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Notes: 6. For a dual device surface mounted on 28mm x 28mm (8cm 2 ) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector pads connected to each half.
7. Same as note (6), except the device is measured at t <5 sec.
8. Same as note (6), except the device is surface mounted on 31mm x 31mm (10cm
2 ) FR4 PCB with high coverage of single sided 1oz copper.
9. For a dual device with one active die.
10. For dual device with 2 active die running at equal power.
11. Thermal resistance from junction to solder-point (on the exposed collector pad).