Diodes ZXTC4591AMC - Manual (Page 4)

ZXTC4591AMC
Document number: DS31925 Rev. 4 - 2
4 of 9
www.diodes.com
October 2012
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A Product Line of
Diodes Incorporated
ZXTC4591AMC
NPN - Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
40 - - V I
C
= 100µA
Collector-Emitter Breakdown Voltage (Note 12) BV
CEO
40 - - V I
C
= 10mA
Emitter-Base Breakdown Voltage BV
EBO
7 - - V I
E
= 100µA
Collector Cutoff Current I
CBO
- - 100 nA V
CB
= 30V
Emitter Cutoff Current I
EBO
- - 100 nA V
EB
= 4V
Collector Emitter Cutoff Current I
CES
- - 100 nA V
CE
= 30V
Static Forward Current Transfer Ratio (Note 12) h
FE
300
300
200
35
-
-
-
- -
900
-
-
-
I C = 1mA, V CE = 5V
I
C
= 500mA, V
CE
= 5V
I
C
= 1A, V
CE
= 5V
I
C
= 2A, V
CE
= 5V
Collector-Emitter Saturation Voltage (Note 12) V
CE(sat)
-
- -
- 300
500
mV
I
C
= 0.5A, I
B
= 50mA
I
C
= 1A, I
B
= 100mA
Base-Emitter Turn-On Voltage (Note 12) V
BE(on)
- - 1.0 V I
C
= 1A, V
CE
= 5V
Base-Emitter Saturation Voltage (Note 12) V
BE(sat)
- - 1.1 V I
C
= 1A, I
B
= 100mA
Output Capacitance C
obo
- - 10 pF V
CB
= 10V, f = 1MHz
Transition Frequency f
T
150 - - MHz
V CE = 10V, I C = 50mA,
f = 100MHz
Notes: 12. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.