Diodes DCX (xxxx) K - Manual (Page 2)

DCX (xxxx) K
Document number: DS30350 Rev. 6 - 2
2 of 12
www.diodes.com
October 2008
© Diodes Incorporated
DCX (xxxx) K
Maximum Ratings PNP Section
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Supply Voltage V CC
50 V
Input Voltage
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
DCX143TK
DCX114TK
V
IN
+10 to –40
+10 to –40
+6 to –40
+5 to –12
+10 to –40
+10 to –40
+5V max
+5V max
V
Output Current
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
DCX143TK
DCX114TK
I
O
-30
-30
-70
-100
-50
-20
-100
-100
mA
Output Current All I C(MAX)
-100 mA
Thermal Characteristics PNP Section
Characteristic Symbol Value Unit
Power Dissipation (Total) (Note 4) P
D
300 mW
Thermal Resistance, Junction to Ambient Air (Note 4) R θJA 833 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Electrical Characteristics NPN Section
@T A = 25°C unless otherwise specified
Characteristic (DDC143TK & DDC114TK only) Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV CBO
50 ⎯ ⎯ V I C = 50
μA
Collector-Emitter Breakdown Voltage BV
CEO
50 ⎯ ⎯ V I
C
= 1mA
Emitter-Base Breakdown Voltage BV
EBO
5 ⎯ −− V I
E
= 50 μA
Collector Cutoff Current I
CBO
⎯ ⎯ 0.5 μA V
CB
= 50V
Emitter Cutoff Current I
EBO
⎯ ⎯ 0.5 μA V
EB
= 4V
Collector-Emitter Saturation Voltage V
CE(SAT)
⎯ ⎯ 0.3 V
I
C
/I
B
= 2.5mA / 0.25mA – DCX143TK
I
C
/I
B
= 1mA / 0.1mA – DCX114TK
DC Current Transfer Ratio h
FE
100 250 600 ⎯ I
C
= 1mA, V
CE
= 5V
Input Resistor (R
1
) Tolerance
ΔR
1
-30 ⎯ +30 % ⎯
Gain-Bandwidth Product* f
T
⎯ 250 ⎯ MHz V
CE
= 10V, I
E
= -5mA, f = 100MHz
* Transistor - For Reference Only