Diodes AF15N50 - Manual (Page 4)

Data Sheet
50V N-Channel MOSFET AF15N50
Aug. 2013 Rev. 1. 0 BCD Semiconductor Manufacturing Limited
4
Recommended Operating Conditions
Parameter Symbol Condition Value Unit
Thermal Resistance (Note 2)

JA
Junction to
Ambient
50
C/W
Thermal Resistance

JC

Junction to Case 4
C/W
Note 2: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square pad.
Electrical Characteristics
T
C
=25°C, unless otherwise specified.
Static Characteristics
Parameters Symbol Conditions Min Typ Max Unit
Drain to Source
Breakdown Voltage
V
DSS(BR)
V
GS
=0V, I
D
=0.25mA 50 V
Gate Threshold Voltage V
GS(TH)
V
DS
=V
GS
, I
D
=0.25mA 0.5 0.9 2 V
Zero Gate Voltage
Drain Current
I
DSS
V
DS
=50V, V
GS
=0V 1
A
Gate to Source
Leakage Current
I
GSS
V
GS
=10V, V
DS
=0V ±10
A
Drain to Source
On-state Resistance
R
DS(ON)
V
GS
=10V, I
D
=15A 10 14.32 20
m

V
GS
=4.5V, I
D
=15A 12 16.36 30