Diodes AF15N50 - Manual (Page 5)

Data Sheet
50V N-Channel MOSFET AF15N50
Aug. 2013 Rev. 1. 0 BCD Semiconductor Manufacturing Limited
5
Electrical Characteristics (Continued)
T
C
=25°C, unless otherwise specified.
Dynamic Characteristics
Parameters Symbol Conditions Min Typ Max Unit
Input Capacitance C
iss
V
GS
=0V, V
DS
=18V,
f=1MHz
1350
pF
V
GS
=0V, V
DS
=25V,
f=1MHz
1316
Output Capacitance C
oss
V
GS
=0V, V
DS
=18V,
f=1MHz
110
pF
V
GS
=0V, V
DS
=25V,
f=1MHz
97
Reverse Transfer
Capacitance
C
rss
V
GS
=0V, V
DS
=18V,
f=1MHz
95
pF
V
GS
=0V, V
DS
=25V,
f=1MHz
85
Turn-on Delay Time t
d(on)
V
GS
=10V, I
D
=15A,
V
DD
=25V, R
G
=6

4.162
ns
Rise Time t
r
14.85
Turn-off Delay Time t
d(off)
35.452
Fall Time t
f
31.108
Gate to Source Charge Q
gs
V
GS
=0V to 10V,
V
DD
=25V, I
D
=15A
3.2
nC
Gate to Drain Charge
(Miller Charger)
Q
gd
5.7
Total Gate Charge Q
g
15.2
Gate Resistance R
g
0.85
