Diodes DSS2540M - Manual (Page 2)

DSS2540M
Document number: DS31820 Rev. 3 - 2
2 of 5
www.diodes.com
January 2011
© Diodes Incorporated
DSS2540M
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
40 V
Collector-Emitter Voltage V CEO
40 V
Emitter-Base Voltage V
EBO
6 V
Collector Current - Continuous I
C
500 mA
Peak Pulse Collector Current I CM
1 A
Peak Base Current I
BM
100 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4) @ T A = 25
°C P
D
250 mW
Thermal Resistance, Junction to Ambient (Note 4) @ T
A
= 25 °C
R θJA 500 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout.
0.000001 0.0001 0.001 0.01 0.1 1 10 100 1,000 10,000
Fig. 1 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.00001
0.001
0.01
0.1
1
r(
t),
T
R
AN
SI
EN
T
T
H
E
R
MA
L
R
ES
IS
T
AN
C
E
T - T = P * R (t)
Duty Cycle, D = t /t
J A JA
1 2
θ
R (t) = r(t) * θJA R
R = 500°C/W
θ
θ
JA
JA
P(pk)
t
1
t
2
D = 0.7
D = 0.5
D = 0.3
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.1
0.1
1
10
100
1,000
1E-06 0.0001 0.01 1 100 10,000
Fig. 2 Single Pulse Maximum Power Dissipation
t , PULSE DURATION TIME (s)
1
P
(p
k
),
PE
AK T
R
AN
SI
ENT
P
O
WE
R
(W
)
Single Pulse
T - T = P * R (t)
J A JA θ
R (t) = r(t) * θJA R
R = 500°C/W
θ
θ
JA
JA
0 50 100 150 200
T , AMBIENT TEMPERATURE ( C)
A
°
Fig. 3 Power Dissipation vs. Ambient Temperature (Note 4)
0
0.05
0.10
0.15
0.30
P
,
P
O
WE
R
DIS
S
IP
A
T
IO
N (
W
)
D
0.20
0.25
R = 500°C/W θJA