Electrical characteristics, Dss2540m – Diodes DSS2540M User Manual
Page 3
DSS2540M
Document number: DS31820 Rev. 3 - 2
3 of 5
January 2011
© Diodes Incorporated
DSS2540M
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
40
⎯
⎯
V
I
C
= 100
μA, I
E
= 0
Collector-Emitter Breakdown Voltage (Note 5)
BV
CEO
40
⎯
⎯
V
I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage
BV
EBO
6
⎯
⎯
V
I
E
= 100
μA, I
C
= 0
Collector Cutoff Current
I
CBO
⎯
⎯
100
50
nA
μA
V
CB
= 30V, I
E
= 0
V
CB
= 30V, I
E
= 0, T
A
= 150°C
Emitter Cutoff Current
I
EBO
⎯
⎯
100 nA
V
EB
= 5V, I
C
= 0
ON CHARACTERISTICS (Note 5)
DC Current Gain
h
FE
200
150
50
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
CE
= 2V, I
C
= 10mA
V
CE
= 2V, I
C
= 100mA
V
CE
= 2V, I
C
= 500mA
Collector-Emitter Saturation Voltage
V
CE(sat)
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
50
100
200
250
mV
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5mA
I
C
= 200mA, I
B
= 10mA
I
C
= 500mA, I
B
= 50mA
Collector-Emitter Saturation Resistance
R
CE(sat)
⎯
⎯
500 m
Ω
I
C
= 500mA, I
B
= 50mA
Base-Emitter Saturation Voltage
V
BE(sat)
⎯
⎯
1.2 V
I
C
= 500mA, I
B
= 50mA
Base-Emitter Turn On Voltage
V
BE(on)
⎯
⎯
1.1 V
V
CE
= 2V, I
C
= 100mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯
⎯
6 pF
V
CB
= 10V, f = 1.0MHz
Current Gain-Bandwidth Product
f
T
250 300
⎯
MHz
V
CE
= 5V, I
C
= 100mA, f = 100MHz
Notes:
5. Measured under pulsed conditions. Pulse width = 300
μs. Duty cycle ≤2%.
0
1
2
3
4
5
V
, COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
0
0.20
0.40
0.60
0.80
1.00
I,
C
O
LL
E
C
T
O
R
C
U
R
R
E
N
T
(A
)
C
I = 1mA
B
I = 2mA
B
I = 3mA
B
I = 4mA
B
I = 5mA
B
1
10
100
1,000
-I , COLLECTOR CURRENT (mA)
C
Fig. 5 Typical DC Current Gain vs. Collector Current
0
100
200
300
400
500
600
700
900
h,
D
C
C
U
R
R
EN
T
G
AIN
FE
800
1,000
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A