Diodes DMN2029USD - Manual (Page 2)

DMN2029USD
Document number: DS36127 Rev. 3 - 2
2 of 6
www.diodes.com
May 2013
© Diodes Incorporated
DMN2029USD
ADVAN
CE I
N
F
O
RM
ATI
O
N
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
20 V
Gate-Source Voltage V
GSS
±8 V
Continuous Drain Current (Note 6) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
5.8
4.7
A
t < 10s
T
A
= +25°C
T
A
= +70°C
I
D
6.9
5.7
A
Maximum Body Diode Forward Current (Note 6) I
S
2.1 A
Pulsed Drain Current (10 s pulse, duty cycle = 1%) I
DM
30 A
Avalanche Current (Note 7) L = 0.1mH I
AS
15 A
Avalanche Energy (Note 7) L = 0.1mH E
AS
11.2 mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
1.2
W
T
A
= +70°C 0.7
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R θ
JA
115
°C/W
t < 10s 70
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
1.4
W
T
A
= +70°C 0.9
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
θJA
95
°C/W t < 10s 60
Thermal Resistance, Junction to Case (Note 6) R
θJC
14.5
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
20 — — V V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current I
DSS
— — 1 µA V
DS
= 16V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±100 nA V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
0.6 — 1.5 V V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance R
DS(ON)
— 14 25
mΩ
V
GS
= 4.5V, I
D
= 6.5A
— 19 35 V
GS
= 2.5V, I
D
= 5.4A
Forward Transfer Admittance |Y
fs
| — 10 — S V
DS
= 5V, I
D
= 6.5A
Diode Forward Voltage V
SD
— 0.7 1.2 V V
GS
= 0V, I
S
= 1.3A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
— 1171 —
pF
V
DS
= 10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
— 133 —
Reverse Transfer Capacitance C
rss
— 110 —
Gate Resistance R
G
— 1.2 — Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
— 10.4 —
nC V
DS
= 10V, I
D
= 3A
Total Gate Charge (V
GS
= 8V) Q
g
— 18.6 —
Gate-Source Charge Q
gs
— 1.9 —
Gate-Drain Charge Q
gd
— 2.3 —
Turn-On Delay Time t
D(on)
— 16.5 —
nS
V
GS
= 4.5V, V
DD
= 10V, R
GEN
= 6Ω,
I
D
= 1A
Turn-On Rise Time t
r
— 33.3 —
Turn-Off Delay Time t
D(off)
— 119.3 —
Turn-Off Fall Time t
f
— 53.5 —
Body Diode Reverse Recovery Time t
rr
— 7.5 — nS I
S
= 6.5A, dI/dt = 100A/μs
Body Diode Reverse Recovery Charge Q
rr
— 2.0 — nC I
S
= 6.5A, dI/dt = 100A/μs
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
AR
and E
AR
rating are based on low frequency and duty cycles to keep T
J
= +25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.