Diodes DMN2029USD User Manual
Page 4
DMN2029USD
Document number: DS36127 Rev. 3 - 2
4 of 6
May 2013
© Diodes Incorporated
DMN2029USD
ADVAN
CE I
N
F
O
RM
ATI
O
N
NEW PROD
UC
T
T , AMBIENT TEMPERATURE ( C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
A
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
(t
h
)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50
-25
0
25
50
75
100
125
150
I = 1mA
D
I = 250µA
D
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 8 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
T = 25°C
A
0
2
4
6
8
10
12
14
16
18
20
0
0.3
0.6
0.9
1.2
1.5
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 9 Typical Junction Capacitance
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
A
N
C
E (
p
F)
T
10
100
1000
10000
0
2
4
6
8
10 12
14
16 18
20
C
iss
f = 1MHz
C
oss
C
rss
Q
(nC)
g
, TOTAL GATE CHARGE
Figure 10 Gate Charge
V
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
0
1
2
3
4
5
6
7
8
0
2
4
6
8
10 12
14
16 18
20
V
= 10V
I = A
DS
D
3
t1, PULSE DURATION TIME (sec)
Figure 11 Transient Thermal Resistance
r(
t)
, T
R
ANSI
EN
T
T
H
E
R
MA
L
R
ES
IS
TAN
C
E
D = 0.5
D = 0.7
D = 0.9
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
R
(t) = r(t) * R
R
= 113°C/W
Duty Cycle, D = t1/ t2
JA
JA
JA
0.001
0.01
0.1
1
1000
100
10
1
0.1
0.01
0.001
0.0001
0.00001