Dmn3032le new prod uc t, Dmn3032le – Diodes DMN3032LE User Manual
Page 4
DMN3032LE
Document number: DS36695 Rev. 2 - 2
4 of 6
May 2014
© Diodes Incorporated
DMN3032LE
NEW PROD
UC
T
0
0.01
0.02
0.03
0.04
0.05
0.06
-50
-25
0
25
50
75
100
125 150
T , JUNCTION TEMPERATURE ( C)
Figure 7 On-Resistance Variation with Temperature
J
°
R
,
D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ESI
S
TA
N
C
E (
)
DS
(O
N)
Ω
V
= 4.5V
I = 5A
GS
D
V
=
V
I = 10A
GS
D
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50
-25
0
25
50
75
100
125 150
T , JUNCTION TEMPERATURE ( C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
J
°
I = 1mA
D
I = 250µA
D
V
, G
A
TE THRE
SHOL
D
VO
LT
AG
E (
V
)
GS
(t
h
)
0
2
4
6
8
10
12
14
16
18
20
0
0.3
0.6
0.9
1.2
1.5
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 9 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
10
100
1000
0
5
10
15
20
25
30
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10 Typical Junction Capacitance
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
A
N
C
E (
pF
)
T
C
iss
f = 1MHz
C
oss
C
rss
0
2
4
6
8
10
0
2
4
6
8
10
12
Q
(nC)
g
, TOTAL GATE CHARGE
Figure 11 Gate Charge
V
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
V
= 15V
I =
A
DS
D
5.8