Silicon Power CCS AC 53N30_N-Type Semiconductor Discharge Switch, Bare Die - Manual (Page 4)

Application Notes
T =125oC,
V GE =15V
T C =125 o C, V GE =15V
A1. Pulse Transformer Gating
A preferred method of isolation, a pulse transformer may be used to
predictably and reliably trigger the Thyristor. This gating method allows
the user to easily connect the devices in parallel or series (See Fig. A1.2
for series example).
Components (Fig. A1.1)
T
1
- Method of electrically isolating the device from control circuitry.
Pulse X-former insulation characteristic must be selected based on
application requirements.
R
1
(or R
GK
) - Serves as a keep-off resistor, shunting dv/dt induced,
capacitively coupled Anode-Gate current to the Cathode. The lower the
value of R
1
, the better the dv/dt immunity of the sub-circuit. In the event R
1
must be increased to the point where it's resistance compromises the dv/dt
requirement of the application, a low voltage capacitor (.1-.2uF) may be
placed in parallel to provide a more responsive shunt path; however, the
added capacitance will require more charge be delivered to satisfy the
turn-on requirements outlined in the simplified theory of operation.
D
1
& D
2
- Current steering diodes. Reverse gate current increases the
impedance of the device ("attempted turn-off"). Reverse gate current
experienced during a high current discharge event may permanently
damage the device. D
1
restricts the direction of current flow through the
secondary while D
2
provides a "free-wheeling" or holding path to the gate.
It is highly recommended that the components listed above, specifically
DUT
D
2
D
1
R
1
T
1
Pulse Transformer Gating ANODE - A
CATHODE - K
S P
GATE
.7V
Figure A1.1
Basic Pulse X-Former
Gating Circuit
275 Great Valley Parkway
Malvern, PA 19355
Ph: 610-407-4700
Solidtron TM
N-Type Semiconductor Discharge Switch, Bare Die
CCSAC53N30A10
CAO 05/28/09
It is highly recommended that the components listed above, specifically
R
1
and D
2
be placed in as close physical/electrical proximity to the device
as the application will allow. Parasitic inductance in series with the Gate to
Cathode shunt path will also compromise the dv/dt immunity of the device.
Theory of Operation (Refer to Fig. A1.1)
A current pulse supplied to the primary of T
1
induces a current into the
secondary of T
1
. Current supplied by the T
1
secondary forward biases D
1
supplying current through R
1
; thus, developing voltage across R
1
until the
gate of the Thyristor is forward biased (~0.7V). Current is then supplied to
the Gate of the Thyristor until turn-on (latched-on) is achieved. Following
the discharge event, once the Thyristor current reaches zero and it's stored
charge is cleared (Storage Time) the circuit is reset and Anode voltage
may be reapplied.
Example: Turn-on will occur with R
1
=5 ohms, I
T1-S
=/> 140mA
It is recommended that T
1
secondary current (I
T1-S
) =/> 0.7V / R
1
be
supplied for approximately 2uSec. Device turn-on delay (T
D-ON
) is typically
less than 200nSec.
Although I
T1-S
= 0.7V / R
1
is sufficient to turn the device on, we typically
recommend, where possible, I
T1-S
=/ >500mA, Pulse Duration =/> 5uSec
with R
1
= 10 ohms.
D
2
D
1
R
1
D
2
D
1
R
1
T
1
Figure A1.2
Series Connection
Pulse X-Former Gating