Silicon Power CCS AC 53N30_N-Type Semiconductor Discharge Switch, Bare Die - Manual (Page 5)

Packaging and Handling
1. ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE
SENSITIVE DEVICES IN ALL ASSEMBLY AND TEST AREAS. Proper handling procedures must be
observed to prevent electrostatic discharge which may result in permanent damage to the device.
2. The CCSAC53N30 uses an undersized ceramic "lid" which exposes the sensitive Junction Termination
Extention (JTE) of the device. The user is required to encapsulate the device in an encapsulant prior to
applying high voltage. This prevents debris and contaminants from compromising the JTE.
2. Use of a seperate gate return path instead of the cathode power contact is recomended to minimize the
effects of rapidly changing Anode-Cathode currents.
3. Shorting resistor R
GK
is application specific. It can control the gate drive requirements and some device
properties. However, R
GK
= 10 Ohms satisfies most application requirements.
4. Installation reflow temperature should not exceed 260°C or internal package degradation may result.
T =125oC,
V GE =15V
T C =125 o C, V GE =15V
Solidtron TM
N-Type Semiconductor Discharge Switch, Bare Die
CCSAC53N30A10
275 Great Valley Parkway
Malvern, PA 19355
Ph: 610-407-4700
Dimensions
Revision History
Rev EA #
0 04242009-NB-0013
CAO 05/28/09
Date Nature of Change
12-03-2007 Initial Issue