Silicon Power PSM 80 BA A10_Power Semiconductor Half-Bridge Module User Manual
Page 3
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PSM80BA10
Power Semiconductor Half-Bridge Module
Notes
1.) Measurements made with a 10 Ohm shorting resistor
connected
between the gate and cathode.
2. ) Case Exterior Assummed to be 0.002" of 63Sn/37Pb solder
applied
directly to cathode bond area of ThinPak.
3. ) Performance guarenteed by design only.
4. ) Production testing is limited to 2KV prior to encapsulation.
5. ) Characterization accomplished using Rgk=10 ohms.
CAO 05/28/09
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CORPORATION
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www.siliconpower.com
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