Switching characteristics – Cypress Perform CY7C1380F User Manual

Page 22

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CY7C1380D, CY7C1382D

CY7C1380F, CY7C1382F

Document #: 38-05543 Rev. *F

Page 22 of 34

Switching Characteristics

Over the Operating Range

[20, 21]

Parameter

Description

250 MHz

200 MHz

167 MHz

Unit

Min

Max

Min

Max

Min

Max

t

POWER

V

DD

(Typical) to the first Access

[22]

1

1

1

ms

Clock
t

CYC

Clock Cycle Time

4.0

5

6

ns

t

CH

Clock HIGH

1.7

2.0

2.2

ns

t

CL

Clock LOW

1.7

2.0

2.2

ns

Output Times
t

CO

Data Output Valid After CLK Rise

2.6

3.0

3.4

ns

t

DOH

Data Output Hold After CLK Rise

1.0

1.3

1.3

ns

t

CLZ

Clock to Low-Z

[23, 24, 25]

1.0

1.3

1.3

ns

t

CHZ

Clock to High-Z

[23, 24, 25]

2.6

3.0

3.4

ns

t

OEV

OE LOW to Output Valid

2.6

3.0

3.4

ns

t

OELZ

OE LOW to Output Low-Z

[23, 24, 25]

0

0

0

ns

t

OEHZ

OE HIGH to Output High-Z

[23, 24, 25]

2.6

3.0

3.4

ns

Setup Times
t

AS

Address Setup Before CLK Rise

1.2

1.4

1.5

ns

t

ADS

ADSC, ADSP Setup Before CLK Rise

1.2

1.4

1.5

ns

t

ADVS

ADV Setup Before CLK Rise

1.2

1.4

1.5

ns

t

WES

GW, BWE, BW

X

Setup Before CLK Rise

1.2

1.4

1.5

ns

t

DS

Data Input Setup Before CLK Rise

1.2

1.4

1.5

ns

t

CES

Chip Enable SetUp Before CLK Rise

1.2

1.4

1.5

ns

Hold Times
t

AH

Address Hold After CLK Rise

0.3

0.4

0.5

ns

t

ADH

ADSP, ADSC Hold After CLK Rise

0.3

0.4

0.5

ns

t

ADVH

ADV Hold After CLK Rise

0.3

0.4

0.5

ns

t

WEH

GW, BWE, BW

X

Hold After CLK Rise

0.3

0.4

0.5

ns

t

DH

Data Input Hold After CLK Rise

0.3

0.4

0.5

ns

t

CEH

Chip Enable Hold After CLK Rise

0.3

0.4

0.5

ns

Notes

20. Timing reference level is 1.5V when V

DDQ

= 3.3V and is 1.25V when V

DDQ

= 2.5V.

21. Test conditions shown in (a) of AC Test Loads unless otherwise noted.
22. This part has a voltage regulator internally; t

POWER

is the time that the power needs to be supplied above V

DD

(minimum) initially before a read or write operation

can be initiated.

23. t

CHZ

, t

CLZ

,t

OELZ

, and t

OEHZ

are specified with AC test conditions shown in part (b) of

“AC Test Loads and Waveforms”

on page 21. Transition is measured ± 200

mV from steady-state voltage.

24. At any given voltage and temperature, t

OEHZ

is less than t

OELZ

and t

CHZ

is less than t

CLZ

to eliminate bus contention between SRAMs when sharing the same

data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed

to achieve High-Z prior to Low-Z under the same system conditions.

25. This parameter is sampled and not 100% tested.

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