Philips BGD904L - Manual (Page 2)

2001 Nov 01 2
Philips Semiconductors Product specification
860 MHz, 20 dB gain power doubler amplifier BGD904L
FEATURES
•
Excellent linearity
•
Extremely low noise
•
Excellent return loss properties
•
Silicon nitride passivation
•
Rugged construction
•
Gold metallization ensures excellent reliability
•
Low DC current consumption.
APPLICATIONS
•
CATV systems operating in the 40 to 900 MHz
frequency range.
DESCRIPTION
Hybrid amplifier module in a SOT115J package operating
with a supply voltage of 24 V.
PINNING - SOT115J
PIN DESCRIPTION
1 input
2 common
3 common
5 +V
B
7 common
8 common
9 output
Fig.1 Simplified outline.
handbook, halfpage
7
8
9
2
3 5 1
Side view MSA319
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
power gain f = 50 MHz 19.7 20.3 dB
f = 900 MHz 20.5 21.5 dB
I
tot
total current consumption (DC) V
B
= 24 V 350 380 mA
SYMBOL PARAMETER MIN. MAX. UNIT
V
B
supply voltage
−
30 V
V
i
RF input voltage
−
70 dBmV
T
stg
storage temperature
−
40 +100
°
C
T
mb
operating mounting base temperature
−
20 +100
°
C