Philips BGM1012 - Manual (Page 7)

2002 Sep 06 7
NXP Semiconductors Product specification
MMIC wideband amplifier BGM1012
handbook, halfpage
0 1000
f (MHz)
2000 4000
0
− 50
− 10
3000
− 20
− 30
− 40
MLD912
s12 2
(dB)
Fig.9 Isolation (
s
12
 2 ) as a function of frequency;
typical values.
I
S
= 14.6 mA; V
S
= 3 V; P
D
=
30 dBm; Z
O
= 50

handbook, halfpage
0
f (MHz)
(1)
(3)
25
20
15
10
1000 2000 4000 3000
MLD913
s21 2
(dB)
(2)
Fig.10 Insertion gain (
s
21
 2 ) as a function of
frequency; typical values.
P
D
= 30 dBm; Z
O
= 50 
(1) I
S
= 18.7 mA; V
S
= 3.3 V.
(2) I
S
= 14.6 mA; V
S
= 3 V.
(3) I
S
= 10.6 mA; V
S
= 2.7 V.
handbook, halfpage
− 40 − 30
PD (dBm)
PL
(dBm)
− 20 0
20
10
− 10
− 20
0
− 10
MLD914
(1)
(2)
(3)
Fig.11 Load power as a function of drive power at
1 GHz; typical values.
f = 1 GHz; Z
O
= 50 
(1) V
S
= 3.3 V.
(2) V
S
= 3 V.
(3) V
S
= 2.7 V.
handbook, halfpage
− 40 − 30
PD (dBm)
PL
(dBm)
− 20 0
(1)
(2) (3)
20
10
− 10
− 20
0
− 10
MLD915
Fig.12 Load power as a function of drive power at
2.2 GHz; typical values.
f = 2.2 GHz; Z
O
= 50 
(1) V
S
= 3.3 V.
(2) V
S
= 3 V.
(3) V
S
= 2.7 V.